IRFSZ40 Search Results
IRFSZ40 Functional Equivalents (1)
The Functional Equivalents tab will give you options that are likely to match the same function of IRFSZ40, but it may not fit your design.
Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description |
|---|---|---|---|
| STP45NE06FP | STMicroelectronics | Check for Price | Power Field-Effect Transistor, 25A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
IRFSZ40 Datasheets (2)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| IRFSZ40 | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | 120.28KB | 1 | ||
| IRFSZ40 |
|
N-Channel Power MOSFET | Scan | 285.62KB | 5 |
IRFSZ40 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
SSS60N
Abstract: sss6n60 SSS50N06 1RFS644 IRFS540 IRFS541 SSS7N60 irfs630 RFS830
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OCR Scan |
O-220 IRFSZ20 SSS15N05 IRFSZ30 IRFSZ40 SSS50N05 SSS60N05 IRFSZ24 SSS15N06 IRFSZ34 SSS60N sss6n60 SSS50N06 1RFS644 IRFS540 IRFS541 SSS7N60 irfs630 RFS830 | |
irfsz42Contextual Info: IRFSZ44/45 IRFSZ40/42 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • TO-220F Lower R ds ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability |
OCR Scan |
IRFSZ44/45 IRFSZ40/42 O-220F IRFSZ44 IRFSZ45 IRFSZ40 IRFSZ42 | |
IRFS540
Abstract: IRFS541 irfsz22 IRFS634 irfs630 IRFS522
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OCR Scan |
O-220 IRFSZ22 IRFSZ20 IRFSZ32 IRFSZ30 IRFSZ42 IRFSZ40 IRFSZ25 IRFSZ24 IRFSZ35 IRFS540 IRFS541 IRFS634 irfs630 IRFS522 | |
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Contextual Info: SA M S UN G E L E C T R O N I C S INC b4E D • T T b M l M S 0 0 1 S 4 3 D 137 « S r i G K IRFSZ44/45 IRFSZ40/42 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • Lower R ds <o n > Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure |
OCR Scan |
IRFSZ44/45 IRFSZ40/42 IRFSZ44 IRFSZ45 IRFSZ40 IRFSZ42 IRFSZ42 | |
std2n52
Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
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Original |
2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 std2n52 stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent | |
IRF9210
Abstract: darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1
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OCR Scan |
2N3904 2N3906 2N4401 2N4403 2N5087 2N5088 2N5551 2N6515 KSP06 KSP10 IRF9210 darlington NPN 600V 8a transistor fet 10a 600v darlington NPN 600V 12a transistor transistor IRF9640 N-CH POWER MOSFET TO-92 600v 12A TO220F NPN Transistor 600V 5A TO-220 transistor irf620 KSH117-1 | |
0280 130 085
Abstract: 250M IRFSZ40 IRFSZ44 UG2F
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OCR Scan |
IRFSZ44/40 IRFSZ44 IRFSZ40 O-220F 002A2T0 0280 130 085 250M UG2F | |
SSH6N80
Abstract: IRF640 equivalent buz100 equivalent ste38NA50 irf540 equivalent stp2na60 buz10 equivalent BUK444 equivalent 2SK2700 equivalent BUZ71 equivalent
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Original |
2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 SSH6N80 IRF640 equivalent buz100 equivalent ste38NA50 irf540 equivalent stp2na60 buz10 equivalent BUK444 equivalent 2SK2700 equivalent BUZ71 equivalent |