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IRFID222 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IRFD222 Abstract: IRFD223 Contextual Info: FIT FIELD EFFECT POWER TRANSISTOR This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes G E’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged ness and reliability. IRFID222,223 0.7 AMPERES 200,150 VOLTS	OCR Scan	00A//ys, IRFD222 IRFD223	PDF

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IRFD222

Abstract: IRFD223
Contextual Info: FIT FIELD EFFECT POWER TRANSISTOR This series of N -C hannel Enhancem ent-m ode Power MOSFETs utilizes G E’s advanced Power DMOS technology to achieve low on-resistance with excellent device rugged ness and reliability. IRFID222,223 0.7 AMPERES 200,150 VOLTS

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00A//ys, IRFD222 IRFD223

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