IRFD024 Search Results
IRFD024 Datasheets (11)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| IRFD024 | Toshiba | Power MOSFETs Cross Reference Guide | Original | 165.78KB | 67 | ||
| IRFD024 | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 2.5A 4-DIP | Original | 9 | |||
| IRFD024 | International Rectifier | Power MOSFET(Vdss=60V, Rds(on)=0.10ohm, Id=2.5A) | Scan | 175.82KB | 6 | ||
| IRFD024 | International Rectifier | HEXFET Power MOSFETs | Scan | 51.17KB | 1 | ||
| IRFD024 | International Rectifier | Plastic Package HEXFETs | Scan | 106.28KB | 1 | ||
| IRFD024 | International Rectifier | HEXFET Power MOSFET | Scan | 175.81KB | 6 | ||
| IRFD024 | International Rectifier | Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 60V, 2.5A, Pkg Style HEXDIP | Scan | 50.01KB | 1 | ||
| IRFD024 | Unknown | Shortform IC and Component Datasheets (Plus Cross Reference Data) | Short Form | 106.71KB | 1 | ||
| IRFD024 | Unknown | Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. | Historical | 40.96KB | 1 | ||
| IRFD024PBF | International Rectifier | HEXFET Power MOSFET | Original | 658.95KB | 8 | ||
| IRFD024PBF | Vishay Siliconix | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 2.5A 4-DIP | Original | 9 |
IRFD024 Price and Stock
Vishay Siliconix IRFD024PBFMOSFET N-CH 60V 2.5A 4-DIP |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IRFD024PBF | Bulk | 2,500 |
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Get Quote | ||||||
Vishay Intertechnologies IRFD024PBFPOWER MOSFET, N-CH, VDSS 60V, RDS(ON) 0.1OHM, ID 2.5A, HD-1,PD 1.3W, VGS+/-20V, QG 25NC |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IRFD024PBF | Bulk | 2,500 |
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Get Quote | ||||||
International Rectifier IRFD024Trans MOSFET N-CH 60V 2.5A 4-Pin HVMDIP |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IRFD024 | 994 | 1 |
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| IRFD024 | 493 |
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IRFD024 | 795 |
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| IRFD024 | 540 |
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| IRFD024 | 514 |
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| IRFD024 | 78 |
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| IRFD024 | 11 |
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| IRFD024 | 9 |
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IRFD024 | 200 |
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Vishay Intertechnologies IRFD024TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,2.5A I(D),TO-250VAR |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IRFD024 | 40 |
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Infineon Technologies AG IRFD024PBF |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IRFD024PBF | 34 |
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IRFD024 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
IRF0110
Abstract: IRF0120 IRFD9123 irfu320 THOMSON DISTRIBUTOR 58e d IRFD113 IRFD1Z0 IRFD9014 IRFU121 irfu310
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OCR Scan |
irfd015irfd014irfd025irfd024+13 | |
IRFD024Contextual Info: IRFD024, SiHFD024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • For Automatic Insertion 0.10 Available RoHS* Qg (Max.) (nC) 25 • End Stackable Qgs (nC) 5.8 • 175 °C Operating Temperature |
Original |
irfd024sihfd0242002/95/ec11-mar-11 | |
irfd024Contextual Info: PD - 9.699B IRFD024 Absolute Maximum Ratings Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 2.5 ID @ TA = 100°C 1.8 IDM Continuous Drain Current, VGS @ 10V Pulsed Drain Current PD @TA = 25°C Power Dissipation 1.3 W VGS 0.0083 1.6 |
Original |
irfd02410sec1e-006 | |
marking dut
Abstract: P-CHANNEL isd xxxx
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Original |
irfd024pbfirfd120marking dutp-channel+1 | |
IRFD024
Abstract: ls 2466
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Original |
irfd024sihfd0242002/95/ec18-jul-08+1 | |
IRFD024Contextual Info: PD - 9699C IRFD024 Absolute Maximum Ratings Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 2.5 ID @ TA = 100°C 1.8 IDM Continuous Drain Current, VGS @ 10V Pulsed Drain Current PD @TA = 25°C Power Dissipation 1.3 W VGS 0.0083 +/-20 |
Original |
9699cirfd02410sec12-mar-07 | |
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Contextual Info: International i» r Rectifier MÛSS4S2 GD1S01G 4b2 • INR PD-9.699A IRFD024 INTERNATIONAL RECTIFIER HEXFET Power M O S FE T Dynamic dv/dt Rating For Automatic Insertion End Stackable 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements |
OCR Scan |
gd1s01girfd024s5m52001sq15 | |
IRFD024
Abstract: SiHFD024
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Original |
irfd024sihfd02418-jul-08 | |
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Contextual Info: PD - 9699C IRFD024 Absolute Maximum Ratings Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 2.5 ID @ TA = 100°C 1.8 IDM Continuous Drain Current, VGS @ 10V Pulsed Drain Current PD @TA = 25°C Power Dissipation 1.3 W VGS 0.0083 +/-20 |
Original |
9699cirfd02410sec08/25/ded+1 | |
IRFD024
Abstract: OA 91 diode
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OCR Scan |
irfd024oa 91 diode | |
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Contextual Info: IRFD024, SiHFD024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • For Automatic Insertion 0.10 Available RoHS* Qg (Max.) (nC) 25 • End Stackable Qgs (nC) 5.8 • 175 °C Operating Temperature |
Original |
irfd024sihfd0242002/95/ec2011/65/eu+1 | |
C294
Abstract: 1RFD024
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OCR Scan |
irfd024c-293c-294c294+1 | |
IRFD024Contextual Info: IRFD024, SiHFD024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Available • For Automatic Insertion 0.10 RoHS* Qg (Max.) (nC) 25 • End Stackable Qgs (nC) 5.8 • 175 °C Operating Temperature |
Original |
irfd024sihfd0242002/95/ec18-jul-08 | |
irf0014
Abstract: IRF09014 IRF0220 IRF0024 IRF09120 INTERNATIONAL RECTIFIER 9439 IRFD110 IRF0110 INTERNATIONAL RECTIFIER 9516 irf09024
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OCR Scan |
qq1q554irf0024irfd025irf0014+13 | |
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AN609
Abstract: IRFD024
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Original |
irfd024sihfd024an6095568m+4 | |
1RFD024
Abstract: IRFD024 DR17 UT-12V
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OCR Scan |
irfd024150kd1rfd024dr17+1 | |
IRFD024PBF
Abstract: IRFD120
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Original |
5933airfd024pbfirfd120 | |
IRFD120
Abstract: IRFD024PBF
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Original |
5933airfd024pbfirfd120 | |
SiHFD024Contextual Info: IRFD024, SiHFD024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Available • For Automatic Insertion 0.10 RoHS* Qg (Max.) (nC) 25 • End Stackable Qgs (nC) 5.8 • 175 °C Operating Temperature |
Original |
irfd024sihfd02412-mar-07 | |
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Contextual Info: IRFD024, SiHFD024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • For Automatic Insertion 0.10 Available RoHS* Qg (Max.) (nC) 25 • End Stackable Qgs (nC) 5.8 • 175 °C Operating Temperature |
Original |
irfd024sihfd0242002/95/ec2011/65/eu+2 | |
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Contextual Info: IRFD024 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V) I(D) Max. (A)2.5 I(DM) Max. (A) Pulsed I(D)1.8 @Temp (øC)100 IDM Max (@25øC Amb)20 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.3 Minimum Operating Temp (øC)-55õ |
Original |
irfd024 | |
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Contextual Info: PD - 9699C IRFD024 Absolute Maximum Ratings Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 2.5 ID @ TA = 100°C 1.8 IDM Continuous Drain Current, VGS @ 10V Pulsed Drain Current PD @TA = 25°C Power Dissipation 1.3 W VGS 0.0083 +/-20 |
Original |
9699cirfd02410sec | |
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Contextual Info: PD- 95933A IRFD024PbF Lead-Free ± 20 Document Number: 91126 08/25/05 www.vishay.com 1 IRFD024PbF Document Number: 91126 www.vishay.com 2 IRFD024PbF Document Number: 91126 www.vishay.com 3 IRFD024PbF Document Number: 91126 www.vishay.com 4 IRFD024PbF Document Number: 91126 |
Original |
5933airfd024pbf08-mar-07 | |
S10 diode
Abstract: IRFD024 VISHAY MARKING S10
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Original |
irfd024sihfd0242002/95/ec11-mar-11+2 | |