IRFD024 Equivalents and Alternates

IRFD024 FFF Equivalents (1)

The Form Fit Function (FFF) results will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts.

Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number	Manufacturer	Composite Price	Description
IRFD024	International Rectifier	Check for Price	Power Field-Effect Transistor, 2.5A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IRFD024 Functional Equivalents (4)

The Functional Equivalents tab will give you options that are likely to match the same function of IRFD024, but it may not fit your design.

Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number	Manufacturer	Composite Price	Description
IRFD024	Vishay Siliconix	Check for Price	Power Field-Effect Transistor, 2.5A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
IRFD024PBF	Vishay Intertechnologies	Check for Price	Power Field-Effect Transistor, 2.5A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
IRFD024PBF	International Rectifier	Check for Price	Power Field-Effect Transistor, 2.5A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
IRFD024PBF	Vishay Siliconix	Check for Price	Power Field-Effect Transistor, 2.5A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IRFD024 Datasheets (11)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
IRFD024	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF	165.78KB	67
IRFD024	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 2.5A 4-DIP	Original	PDF		9
IRFD024	International Rectifier	Power MOSFET(Vdss=60V, Rds(on)=0.10ohm, Id=2.5A)	Scan	PDF	175.82KB	6
IRFD024	International Rectifier	HEXFET Power MOSFETs	Scan	PDF	51.17KB	1
IRFD024	International Rectifier	Plastic Package HEXFETs	Scan	PDF	106.28KB	1
IRFD024	International Rectifier	HEXFET Power MOSFET	Scan	PDF	175.81KB	6
IRFD024	International Rectifier	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 60V, 2.5A, Pkg Style HEXDIP	Scan	PDF	50.01KB	1
IRFD024	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	106.71KB	1
IRFD024	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	40.96KB	1
IRFD024PBF	International Rectifier	HEXFET Power MOSFET	Original	PDF	658.95KB	8
IRFD024PBF	Vishay Siliconix	FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 2.5A 4-DIP	Original	PDF		9

IRFD024 Price and Stock

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Vishay Intertechnologies IRFD024PBF MOSFET N-CH 60V 2.5A 4DIP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	IRFD024PBF	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
RS	IRFD024PBF	Bulk			2,500	1 - 10 - 100 - 1000 - 10000 $1.01	Get Quote
Vishay Siliconix IRFD024PBF MOSFET N-CH 60V 2.5A 4-DIP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	IRFD024PBF	Bulk			2,500	1 - 10 - 100 - 1000 - 10000 $1.52	Get Quote
International Rectifier IRFD024 Trans MOSFET N-CH 60V 2.5A 4-Pin HVMDIP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Bristol Electronics	IRFD024		1,974			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components ()	IRFD024		1,040			1 $4.39 10 $4.39 100 $2.05 1000 $1.90 10000 $1.90	Buy Now
	IRFD024		540			1 $4.00 10 $4.00 100 $4.00 1000 $1.65 10000 $1.65	Buy Now
	IRFD024		514			1 $4.78 10 $4.78 100 $2.95 1000 $2.63 10000 $2.63	Buy Now
	IRFD024		158			1 $2.14 10 $2.14 100 $0.80 1000 $0.80 10000 $0.80	Buy Now
	IRFD024		11			1 $2.50 10 $2.00 100 $1.50 1000 $1.50 10000 $1.50	Buy Now
	IRFD024		9			1 $2.40 10 $2.21 100 $2.21 1000 $2.21 10000 $2.21	Buy Now
ComSIT USA	IRFD024		200			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Vishay Intertechnologies IRFD024 TRANSISTOR,MOSFET,N-CHANNEL,60V V(BR)DSS,2.5A I(D),TO-250VAR
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	IRFD024		40			1 $1.00 10 $0.80 100 $0.60 1000 $0.60 10000 $0.60	Buy Now
Infineon Technologies AG IRFD024PBF
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Ameya Holding Limited	IRFD024PBF		34			1 - 10 - 100 - 1000 - 10000 -	Get Quote

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IRFD024 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
IRF0110 Abstract: IRF0120 IRFD9123 irfu320 THOMSON DISTRIBUTOR 58e d IRFD113 IRFD1Z0 IRFD9014 IRFU121 irfu310 Contextual Info: THOMSON/ DISTRIBUTOR SÄE I • 1ClEbB73 0 0 0 S 8 0 0 International io n Rectifier 7SS ■ HEXFET Power MOSFETs Plastic Insertable Package HEXDIP N-Channel Vqs Drain Source Voltage Volts) Part Number IRFD015 IRFD014 IRFD025 IRFD024 IRFD1Z3 IRFD113 IRFD123	OCR Scan	IRFD015 IRFD014 IRFD025 IRFD024 M0-001AN IRFD113 IRFD123 IRF0110 IRF0120 IRFD213 IRFD9123 irfu320 THOMSON DISTRIBUTOR 58e d IRFD1Z0 IRFD9014 IRFU121 irfu310	PDF
IRFD024 Contextual Info: IRFD024, SiHFD024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • For Automatic Insertion 0.10 Available RoHS* Qg (Max.) (nC) 25 • End Stackable Qgs (nC) 5.8 • 175 °C Operating Temperature	Original	IRFD024, SiHFD024 2002/95/EC 11-Mar-11 IRFD024	PDF
irfd024 Contextual Info: PD - 9.699B IRFD024 Absolute Maximum Ratings Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 2.5 ID @ TA = 100°C 1.8 IDM Continuous Drain Current, VGS @ 10V Pulsed Drain Current PD @TA = 25°C Power Dissipation 1.3 W VGS 0.0083 1.6	Original	IRFD024 10sec 1E-006 irfd024	PDF
marking dut Abstract: P-CHANNEL isd xxxx Contextual Info: PD- 95933 IRFD024PbF Lead-Free www.irf.com 1 10/27/04 IRFD024PbF 2 www.irf.com IRFD024PbF www.irf.com 3 IRFD024PbF 4 www.irf.com IRFD024PbF www.irf.com 5 IRFD024PbF 6 www.irf.com IRFD024PbF Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations	Original	IRFD024PbF IRFD120 marking dut P-CHANNEL isd xxxx	PDF
IRFD024 Abstract: ls 2466 Contextual Info: IRFD024, SiHFD024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • For Automatic Insertion 0.10 Available RoHS* Qg (Max.) (nC) 25 • End Stackable Qgs (nC) 5.8 • 175 °C Operating Temperature	Original	IRFD024, SiHFD024 2002/95/EC 18-Jul-08 IRFD024 ls 2466	PDF
IRFD024 Contextual Info: PD - 9699C IRFD024 Absolute Maximum Ratings Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 2.5 ID @ TA = 100°C 1.8 IDM Continuous Drain Current, VGS @ 10V Pulsed Drain Current PD @TA = 25°C Power Dissipation 1.3 W VGS 0.0083 +/-20	Original	9699C IRFD024 10sec 12-Mar-07 IRFD024	PDF
Contextual Info: International i» r Rectifier MÛSS4S2 GD1S01G 4b2 • INR PD-9.699A IRFD024 INTERNATIONAL RECTIFIER HEXFET Power M O S FE T Dynamic dv/dt Rating For Automatic Insertion End Stackable 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements	OCR Scan	GD1S01G IRFD024 S5M52 001SQ15	PDF
IRFD024 Abstract: SiHFD024 Contextual Info: IRFD024, SiHFD024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Available • For Automatic Insertion 0.10 RoHS* Qg (Max.) (nC) 25 • End Stackable Qgs (nC) 5.8 • 175 °C Operating Temperature	Original	IRFD024, SiHFD024 18-Jul-08 IRFD024	PDF
Contextual Info: PD - 9699C IRFD024 Absolute Maximum Ratings Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 2.5 ID @ TA = 100°C 1.8 IDM Continuous Drain Current, VGS @ 10V Pulsed Drain Current PD @TA = 25°C Power Dissipation 1.3 W VGS 0.0083 +/-20	Original	9699C IRFD024 10sec 08/25/ded 08-Mar-07	PDF
IRFD024 Abstract: OA 91 diode Contextual Info: International S Rectifier PD-9.699A IRFD024 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating For Automatic Insertion End Stackable 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements V dss - 6 0 V	OCR Scan	IRFD024 IRFD024 OA 91 diode	PDF
Contextual Info: IRFD024, SiHFD024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • For Automatic Insertion 0.10 Available RoHS* Qg (Max.) (nC) 25 • End Stackable Qgs (nC) 5.8 • 175 °C Operating Temperature	Original	IRFD024, SiHFD024 2002/95/EC 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12	PDF
C294 Abstract: 1RFD024 Contextual Info: PD - 9.699A International IGR Rectifier IRFD024 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating For Automatic Insertion End Stackable 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements V dss = 60V	OCR Scan	IRFD024 C-293 C-294 C294 1RFD024	PDF
IRFD024 Contextual Info: IRFD024, SiHFD024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Available • For Automatic Insertion 0.10 RoHS* Qg (Max.) (nC) 25 • End Stackable Qgs (nC) 5.8 • 175 °C Operating Temperature	Original	IRFD024, SiHFD024 2002/95/EC 18-Jul-08 IRFD024	PDF
irf0014 Abstract: IRF09014 IRF0220 IRF0024 IRF09120 INTERNATIONAL RECTIFIER 9439 IRFD110 IRF0110 INTERNATIONAL RECTIFIER 9516 irf09024 Contextual Info: PLASTIC PACKAGE HEXFETs ~ INTERNATIONAL SbE RECT IFIER D INTERNATIONAL r e c t i f i e r IOR 4äSSM55 0010554 1 • HEXDIpTM Package N-CHANNEL Typos Vos R d S ON (max) Ip cont >0M Pd TC - 25°C pulsed max A W Sì IRFD024 ' IRFD02S IRF0014 IRFQ015 60 IRFD123	OCR Scan	QQ1Q554 IRF0024 IRFD025 IRF0014 IRF0015 IRFD123 IRF0113 IRFD120 IRFD110 IRF0223 IRF09014 IRF0220 IRF09120 INTERNATIONAL RECTIFIER 9439 IRF0110 INTERNATIONAL RECTIFIER 9516 irf09024	PDF

AN609 Abstract: IRFD024 Contextual Info: IRFD024_RC, SiHFD024_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,	Original	IRFD024 SiHFD024 AN609, 5568m 2847m 0564m 3390m 25-Oct-10 AN609	PDF
1RFD024 Abstract: IRFD024 DR17 UT-12V Contextual Info: International i “r Rectifier PD-9.699A IRFD024 HEXFET Power MOSFET • • • • • • • Dynamic dv/dt Rating For Automatic Insertion End Stackable 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements V d ss - 60V	OCR Scan	IRFD024 150KD 1RFD024 DR17 UT-12V	PDF
IRFD024PBF Abstract: IRFD120 Contextual Info: PD- 95933A IRFD024PbF Lead-Free ± 20 www.irf.com 1 08/25/05 IRFD024PbF 2 www.irf.com IRFD024PbF www.irf.com 3 IRFD024PbF 4 www.irf.com IRFD024PbF www.irf.com 5 IRFD024PbF 6 www.irf.com IRFD024PbF Peak Diode Recovery dv/dt Test Circuit Circuit Layout Considerations	Original	5933A IRFD024PbF IRFD120 IRFD024PBF IRFD120	PDF
IRFD120 Abstract: IRFD024PBF Contextual Info: PD- 95933A IRFD024PbF Lead-Free ± 20 1 IRFD024PbF 2 IRFD024PbF Hexdip Package Outline Dimensions are shown in millimeters inches Hexdip Part Marking Information THIS IS AN IRFD120 INTERNAT IONAL RECT IF IER LOGO PART NUMBER IRFD120 XXXX AS S EMBLY LOT CODE	Original	5933A IRFD024PbF IRFD120 IRFD120 IRFD024PBF	PDF
SiHFD024 Contextual Info: IRFD024, SiHFD024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) (Ω) VGS = 10 V Available • For Automatic Insertion 0.10 RoHS* Qg (Max.) (nC) 25 • End Stackable Qgs (nC) 5.8 • 175 °C Operating Temperature	Original	IRFD024, SiHFD024 12-Mar-07	PDF
Contextual Info: IRFD024, SiHFD024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • For Automatic Insertion 0.10 Available RoHS* Qg (Max.) (nC) 25 • End Stackable Qgs (nC) 5.8 • 175 °C Operating Temperature	Original	IRFD024, SiHFD024 2002/95/EC 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12	PDF
Contextual Info: IRFD024 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)60 V(BR)GSS (V) I(D) Max. (A)2.5 I(DM) Max. (A) Pulsed I(D)1.8 @Temp (øC)100 IDM Max (@25øC Amb)20 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)1.3 Minimum Operating Temp (øC)-55õ	Original	IRFD024	PDF
Contextual Info: PD - 9699C IRFD024 Absolute Maximum Ratings Parameter Max. Units ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 2.5 ID @ TA = 100°C 1.8 IDM Continuous Drain Current, VGS @ 10V Pulsed Drain Current PD @TA = 25°C Power Dissipation 1.3 W VGS 0.0083 +/-20	Original	9699C IRFD024 10sec	PDF
Contextual Info: PD- 95933A IRFD024PbF Lead-Free ± 20 Document Number: 91126 08/25/05 www.vishay.com 1 IRFD024PbF Document Number: 91126 www.vishay.com 2 IRFD024PbF Document Number: 91126 www.vishay.com 3 IRFD024PbF Document Number: 91126 www.vishay.com 4 IRFD024PbF Document Number: 91126	Original	5933A IRFD024PbF 08-Mar-07	PDF
S10 diode Abstract: IRFD024 VISHAY MARKING S10 Contextual Info: IRFD024, SiHFD024 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 60 RDS(on) () VGS = 10 V • For Automatic Insertion 0.10 Available RoHS* Qg (Max.) (nC) 25 • End Stackable Qgs (nC) 5.8 • 175 °C Operating Temperature	Original	IRFD024, SiHFD024 2002/95/EC 11-Mar-11 S10 diode IRFD024 VISHAY MARKING S10	PDF

IRFD024 Search Results

IRFD024 FFF Equivalents (1)

IRFD024 Functional Equivalents (4)

IRFD024 Datasheets (11)

IRFD024 Price and Stock

Vishay Intertechnologies IRFD024PBF

Vishay Siliconix IRFD024PBF

International Rectifier IRFD024

Vishay Intertechnologies IRFD024

Infineon Technologies AG IRFD024PBF

IRFD024 Datasheets Context Search

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S10 diode