IR4003
Abstract: hastelloy corrosion elgiloy IR4004 parker Relief Valve IR4000 MR0175 IR4002 PARKER HANNIFIN Nitrogen Relief Valve
Contextual Info: High Pressure Regulator Internally Threadless Design Parker Hannifin Corporation’s Veriflo Division introduces the IR4000 Series internally threadless pressure regulator for instrument/analyzer and semiconductor applications. ▼ IR4000 Series Wetted Body . . . . . . 316L Stainless Steel, Hastelloy C-22 ,
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ir4000ir4001ir4002ir4003+8ir4004ir4005hastelloy corrosionelgiloyparker relief valvemr0175parker hannifinnitrogen relief valve
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C10535E
Abstract: NE52318 NE52318-T1 NEC heterojunction bipolar transistor NPN transistor 9418
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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c10535ene52318ne52318-t1nec heterojunction bipolar transistor+1npn transistor 9418
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at 22785
Abstract: nec 2035 744 C10535E NE38118 VP15-00-3 nec 5201
Contextual Info: PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE38118 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.45 dB TYP. Ga = 15.0 dB TYP. OIP3 = 23 dBm TYP. @f = 2 GHz • 4-pin super minimold package
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ne38118ne38118-t1ne38118-t2at 22785+4nec 2035 744c10535evp15-00-3nec 5201
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C10535E
Abstract: NE52318 NE52318-T1 NPN transistor 9418 26364
Contextual Info: PRELIMINARY DATA SHEET GaAs HETEROJUNCTION BIPOLAR TRANSISTOR NE52318 L to S BAND LOW NOISE, HIGH GAIN AMPLIFIER NPN GaAs HBT FEATURES • Ideal for low noise and high gain amplifier NF = 1.1 dB TYP., Ga = 16 dB TYP., MSG = 18.0 dB TYP. @ f = 2 GHz, VCE = 2.0 V, IC = 3 mA, ZS = ZL = 50 Ω
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ne52318ot-343ne52318-t1c10535e+2npn transistor 941826364
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C10535E
Abstract: NE52418 NE52418-T1 transistor GaAS marking 576 NEC heterojunction bipolar transistor MARKING 452 4PIN
Contextual Info: DATA SHEET GaAs HETEROJUNCTION BIPOLAR TRANSISTOR NE52418 L to S BAND LOW NOISE AND HIGH GAIN AMPLIFIER NPN GaAs HBT DESCRIPTION The NE52418 is an NPN GaAs HBT Heterojunction Bipolar Transistor developed for L to S band mobile communication equipment. FEATURES
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ne52418ot-343ne52418-t1c10535e+3transistor gaas marking 576nec heterojunction bipolar transistormarking 452 4pin
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VP15-00-3
Abstract: C10535E
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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C10535E
Abstract: VP15-00-3
Contextual Info: PRELIMINARY DATA SHEET GaAs INTEGRATED CIRCUIT µPG183GR GaAs MMIC DBS 4 x 2 IF Switch DESCRIPTION The µPG183GR is intended for use in Direct Broadcast Satellite DBS applications within the Low Noise Block (LNB) down-converter for systems where at least two LNB outputs are required.
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C10535E
Abstract: NE52418 NE52418-T1
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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