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    IPD30N06S2L-13 Search Results

    IPD30N06S2L-13 Datasheets (2)

    Infineon Technologies
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IPD30N06S2L-13
    		Infineon Technologies Single: N-Channel 55V MOSFETs; Package: PG-TO252-3; Technology: OptiMOS ; VDS (max): 55.0 V; RDS (on) (max) (@10V): 13.0 mOhm; ID (max): 30.0 A; RthJC (max): 1.1 K/W; Original PDF 149.27KB 8
    IPD30N06S2L13ATMA4
    		Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 30A TO252-3 Original PDF 150.24KB
    SF Impression Pixel

    IPD30N06S2L-13 Price and Stock

    Infineon Technologies AG

    Infineon Technologies AG IPD30N06S2L13ATMA4

    MOSFET N-CH 55V 30A TO252-31
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    IPD30N06S2L13ATMA4 Digi-Reel 15,196 1
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    IPD30N06S2L13ATMA4 1,980 356
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    Mouser Electronics IPD30N06S2L13ATMA4 3,662
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    IPD30N06S2L13ATMA4 4,992 1
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    Infineon Technologies AG IPD30N06S2L-13

    MOSFET N-CH 55V 30A TO252-3
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    DigiKey IPD30N06S2L-13 Tape & Reel
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    Quest Components IPD30N06S2L-13 1,562
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    Infineon Technologies AG IPD30N06S2L13ATMA1

    Power Field-Effect Transistor, 30A I(D), 55V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics IPD30N06S2L13ATMA1 333 1
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