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    IPD30N06S2L-13 Search Results

    IPD30N06S2L-13 Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IPD30N06S2L-13
    		Infineon Technologies Single: N-Channel 55V MOSFETs; Package: PG-TO252-3; Technology: OptiMOS ; VDS (max): 55.0 V; RDS (on) (max) (@10V): 13.0 mOhm; ID (max): 30.0 A; RthJC (max): 1.1 K/W; Original PDF 149.27KB 8
    IPD30N06S2L13ATMA4
    		Infineon Technologies Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 55V 30A TO252-3 Original PDF 150.24KB
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    IPD30N06S2L-13 Price and Stock

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    Infineon Technologies AG IPD30N06S2L13ATMA4

    MOSFET N-CH 55V 30A TO252-31
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    DigiKey () IPD30N06S2L13ATMA4 Cut Tape 15,371 1
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    IPD30N06S2L13ATMA4 Digi-Reel 15,371 1
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    IPD30N06S2L13ATMA4 Reel 12,500 2,500
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    Avnet Americas () IPD30N06S2L13ATMA4 Ammo Pack 1
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    IPD30N06S2L13ATMA4 Reel 9 Weeks 2,500
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    Verical () IPD30N06S2L13ATMA4 342,500 2,500
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    IPD30N06S2L13ATMA4 249,815 366
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    IPD30N06S2L13ATMA4 29,222 366
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    IPD30N06S2L13ATMA4 5,000 9
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    IPD30N06S2L13ATMA4 2,475 42
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    IPD30N06S2L13ATMA4 2,377 366
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    IPD30N06S2L13ATMA4 1,459 97
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    IPD30N06S2L13ATMA4 1,313 366
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    IPD30N06S2L13ATMA4 1,061 366
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    IPD30N06S2L13ATMA4 757 366
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    Arrow Electronics IPD30N06S2L13ATMA4 5,000 1
    • 1 $0.64
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    Bristol Electronics IPD30N06S2L13ATMA4 514
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    Rochester Electronics IPD30N06S2L13ATMA4 286,932 1
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    • 1000 $0.68
    • 10000 $0.61
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    Chip One Stop IPD30N06S2L13ATMA4 Cut Tape 2,475 0 Weeks, 1 Days 1
    • 1 $0.60
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    EBV Elektronik IPD30N06S2L13ATMA4 10 Weeks 2,500
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    Vyrian IPD30N06S2L13ATMA4 111,070
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    Infineon Technologies AG IPD30N06S2L-13

    MOSFET N-CH 55V 30A TO252-3
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    DigiKey () IPD30N06S2L-13 Reel
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    Quest Components IPD30N06S2L-13 1,562
    • 1 $1.88
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    • 100 $1.88
    • 1000 $0.86
    • 10000 $0.79
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    Vyrian IPD30N06S2L-13 2,016
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    Infineon Technologies AG IPD30N06S2L13ATMA4 (OPTIMOS)

    Mosfet, N-Ch, 55V, 30A, 175Deg C, 136W; Channel Type:N Channel; Drain Source Voltage Vds:55V; Continuous Drain Current Id:30A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1.6V Rohs Compliant: Yes |Infineon IPD30N06S2L13ATMA4
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    Newark IPD30N06S2L13ATMA4 (OPTIMOS) Cut Tape 14,070 1
    • 1 $0.52
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    Infineon Technologies AG IPD30N06S2L13ATMA1

    Power Field-Effect Transistor, 30A I(D), 55V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
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    Rochester Electronics IPD30N06S2L13ATMA1 333 1
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    Others IPD30N06S2L13ATMA4

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    Chip Stock IPD30N06S2L13ATMA4 5,000
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