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    IPD06N03LZ Search Results

    IPD06N03LZ Datasheets (3)

    Infineon Technologies
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IPD06N03LZ
    Infineon Technologies Transistor Mosfet N-CH 30V 50A 3P-TO252-3-11 Original PDF 160.06KB 8
    IPD06N03LZ G
    Infineon Technologies N-Channel MOSFETs (20V - 250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 25.0 V; RDS (on) (max) (@10V): 5.1 mOhm; RDS (on) (max) (@4.5V): 9.5 mOhm; ID (max): 50.0 A; Original PDF 513.34KB 11
    IPD06N03LZG
    Infineon Technologies Transistor Mosfet N-CH 30V 50A 3PG-TO252-3-11 Original PDF 160.06KB 8

    IPD06N03LZ Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    06n03LZ

    Abstract: 06N03 06n03l IPS06N03LZG JESD22 PG-TO252-3-11 P-TO252-3-11 IPD06N03LZ PG-TO251-3 IPU06N03LZ
    Contextual Info: IPD06N03LZ G IPS06N03LZ G OptiMOS 2 Power-Transistor IPU06N03LZ G Product Summary Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1 for target applications V DS 25 V R DS on),max (SMD Version) 5.0 mΩ ID 50 A • N-channel, logic level


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    ipd06n03lzips06n03lzipu06n03lzp-to252-3-11+9p-to251-3-11p-to251-3-2106n03lz06n0306n03lips06n03lzgjesd22pg-to252-3-11pg-to251-3 PDF