IPD06N03LB Search Results
IPD06N03LB Datasheets (4)
Infineon Technologies
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| IPD06N03LB |
|
OptiMOS2 - SuperSO8, SO8, DPAK | Original | 308.08KB | 9 | ||
| IPD06N03LBG |
|
FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 50A TO-252 | Original | 9 | |||
| IPD06N03LB G |
|
N-Channel MOSFETs (20V - 250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 30.0 V; RDS (on) (max) (@10V): 6.1 mOhm; RDS (on) (max) (@4.5V): 9.1 mOhm; ID (max): 50.0 A; | Original | 391.4KB | 10 | ||
| IPD06N03LBG |
|
OptiMOS 2 Power-Transistor | Original | 288.74KB | 9 |
IPD06N03LB Price and Stock
Infineon Technologies AG
Infineon Technologies AG IPD06N03LBGPower Field-Effect Transistor, 50A I(D), 30V, 0.0061ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
|
IPD06N03LBG | 7,957 |
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Get Quote | |||||||