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Catalog Datasheet	Type	Document Tags	PDF
IPB021N04N Abstract: IEC61249-2-21 JESD22 Contextual Info: IPB021N04N OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 40 V R DS(on),max 2.1 mΩ ID 160 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant	Original	ipb021n04n pg-to263-7 iec61249-2-21 21n04n +1jesd22	PDF

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IPB021N04N

Abstract: IEC61249-2-21 JESD22
Contextual Info: IPB021N04N OptiMOS 2 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 40 V R DS(on),max 2.1 mΩ ID 160 A • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant

Original

ipb021n04n pg-to263-7 iec61249-2-21 21n04n +1

PDF