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    IGT6E10 Search Results

    IGT6E10 Datasheets (3)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    IGT6E10
    General Electric Power Transistor Data Book 1985 Scan PDF 196.25KB 4
    IGT6E10
    Harris Semiconductor Power MOSFET Data Book 1990 Scan PDF 140.63KB 4
    IGT6E10
    International Rectifier Transistor / IGBT Scan PDF 61.52KB 1
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    IGT6E10 Price and Stock

    Harris Semiconductor

    Harris Semiconductor IGT6E10

    IGT6E10 - 10A, 500V IGBT FOR MOTOR DRIVE '
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics IGT6E10 78 1
    • 1 -
    • 10 -
    • 100 $2.50
    • 1000 $2.24
    • 10000 $2.10
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    IGT6E10 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    IGT6E10

    Abstract: 6D10 IGT6D10 bipolar transistors Transistor ge 718
    Contextual Info: Insulated-Gate Bipolar Transistors - IGT6D10, IGT6E10 F ile N u m b e r 2125 N-Channel Enhancement-Mode Conductivity-Modulated Power Field-Effect Transistors TERM INAL DIAGRAM 10A, 400V and 500V Tds on = 0.27 fi Features: • Lo w I / cecsati — 2.5V typ. @ 10A


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    igt6d10igt6e106d10-6d10+2bipolar transistorstransistor ge 718 PDF

    IGT4E10

    Abstract: 2N6976 THOMSON 58E THOMSON DISTRIBUTOR THOMSON DISTRIBUTOR 58e d 2N6975 2N6977 IGTH10N40 IGTH20N40 IGTH20N40A
    Contextual Info: THOMSO N/ DISTRIBUTOR SflE D TCSK ^□2 b ñ7 3 □0 QS 714 Insulated-Gate Bipolar Transistors IGBTs N-Channel Enhancement-Mode Conductivity Modulated Power Field-Effect Transistors—IGBTs Optimized for Switching Applications Package M axim um Ratings BV c e s


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    0qs714o-204aao-218aco-220ab+142n69752n6977igtm10n40igtm10n40aigtm20n40igtm20n40aigt4e102n6976thomson 58ethomson distributorthomson distributor 58e digth10n40igth20n40igth20n40a PDF

    550MH

    Abstract: IGT6D10 IGT6E10
    Contextual Info: Preliminary 26.4 4/85 IGT6D10,E10 c a r ' T R M u s T O i i 10 AMPERES 400,500 VOLTS EQUIV. FId S ON = 0.27 Í1 Insulated Gate Bipolar Transistor This IGT Transistor (Insulated Gate Bipolar Transistor) is a new type of MOS-gate turn on/off power switching device


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    550mhigt6d10igt6e10 PDF