IGC109T120T6RH Search Results
IGC109T120T6RH Datasheets (1)
Infineon Technologies
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| IGC109T120T6RH |
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IGBT Chips; Technology: IGBT 4 High Power; VDS (max): 1,200.0 V; IC (max): 110.0 A; VCE(sat) (max): 2.0 V; VGE(th) (min): 5.0 V; | Original | 69.84KB | 5 |
IGC109T120T6RH Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: IGC109T120T6RH IGBT4 High Power Chip Features: • 1200V Trench + Field stop technology • low VCE sat • soft turn off • positive temperature coefficient • easy paralleling Chip Type IGC109T120T6 RH VCE ICn 1200V 110A This chip is used for: • medium / high power modules |
Original |
IGC109T120T6RH IGC109T120T6 L7742A, | |
|
Contextual Info: IGC109T120T6RH IGBT4 High Power Chip Features: • 1200V Trench + Field stop technology • low VCE sat • soft turn off • positive temperature coefficient • easy paralleling Chip Type VCE ICn IGC109T120T6RH 1200V 110A This chip is used for: • medium / high power modules |
Original |
IGC109T120T6RH IGC109T120T6RH L7742 |