IGC109T120T6 Search Results
IGC109T120T6 Datasheets (3)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| IGC109T120T6RH |
|
IGBT Chips; Technology: IGBT 4 High Power; VDS (max): 1,200.0 V; IC (max): 110.0 A; VCE(sat) (max): 2.0 V; VGE(th) (min): 5.0 V; | Original | 69.84KB | 5 | ||
| IGC109T120T6RL |
|
IGBT Chips; Technology: IGBT 4 Low Power; VDS (max): 1,200.0 V; IC (max): 110.0 A; VCE(sat) (max): 2.05 V; VGE(th) (min): 5.0 V; | Original | 67.79KB | 5 | ||
| IGC109T120T6RM |
|
IGBT Chips; Technology: IGBT 4 Medium Power; VDS (max): 1,200.0 V; IC (max): 110.0 A; VCE(sat) (max): 2.05 V; VGE(th) (min): 5.0 V; | Original | 67.23KB | 5 |
IGC109T120T6 Price and Stock
Infineon Technologies AG IGC109T120T6RHX1SA2- Gel-pak, waffle pack, wafer, diced wafer on film (Alt: IGC109T120T6RHX1SA2) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IGC109T120T6RHX1SA2 | Waffle Pack | 33 |
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Get Quote | ||||||
Infineon Technologies AG IGC109T120T6RLX1SA2- Gel-pak, waffle pack, wafer, diced wafer on film (Alt: IGC109T120T6RLX1SA2) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IGC109T120T6RLX1SA2 | Waffle Pack | 33 |
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Get Quote | ||||||
Infineon Technologies AG IGC109T120T6RMX1SA3- Gel-pak, waffle pack, wafer, diced wafer on film (Alt: IGC109T120T6RMX1SA3) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IGC109T120T6RMX1SA3 | Waffle Pack | 34 |
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Get Quote | ||||||
IGC109T120T6 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
|
Contextual Info: IGC109T120T6RL IGBT4 Low Power Chip Features: • 1200V Trench + Field stop technology • low switching losses • positive temperature coefficient • easy paralleling This chip is used for: • low / medium power modules C Applications: • low / medium power drives |
Original |
igc109t120t6rll7742c | |
|
Contextual Info: IGC109T120T6RM IGBT4 Medium Power Chip Features: • 1200V Trench + Field stop technology • low switching losses • soft turn off • positive temperature coefficient • easy paralleling Chip Type VCE ICn IGC109T120T6RM 1200V 110A This chip is used for: |
Original |
igc109t120t6rml7742b | |
|
Contextual Info: IGC109T120T6RM IGBT4 Medium Power Chip Features: • 1200V Trench + Field stop technology • low switching losses • soft turn off • positive temperature coefficient • easy paralleling Chip Type VCE ICn IGC109T120T6 RM 1200V 110A This chip is used for: |
Original |
igc109t120t6rmigc109t120t6l7742b | |
|
Contextual Info: IGC109T120T6RH IGBT4 High Power Chip Features: • 1200V Trench + Field stop technology • low VCE sat • soft turn off • positive temperature coefficient • easy paralleling Chip Type IGC109T120T6 RH VCE ICn 1200V 110A This chip is used for: • medium / high power modules |
Original |
igc109t120t6rhigc109t120t6l7742a | |
|
Contextual Info: IGC109T120T6RL IGBT4 Low Power Chip Features: • 1200V Trench + Field stop technology • low switching losses • positive temperature coefficient • easy paralleling This chip is used for: • low / medium power modules C Applications: • low / medium power drives |
Original |
igc109t120t6rligc109t120t6l7742c | |
|
Contextual Info: IGC109T120T6RH IGBT4 High Power Chip Features: • 1200V Trench + Field stop technology • low VCE sat • soft turn off • positive temperature coefficient • easy paralleling Chip Type VCE ICn IGC109T120T6RH 1200V 110A This chip is used for: • medium / high power modules |
Original |
igc109t120t6rhl7742 |