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    HS10G Search Results

    HS10G Datasheets (1)

    Intense Photonics
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    HS10G
    		Intense Photonics 10 Gbits/sec PIN-TIA optical receiver with pre-amp Original PDF 56.45KB 2
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    HS10G Price and Stock

    SG Micro Corp

    SG Micro Corp SGM850B-2.5QTHS10G/TR

    - Tape and Reel (Alt: SGM850B-2.5QTHS10G/TR)
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    Avnet Americas SGM850B-2.5QTHS10G/TR Tape & Reel 4,000
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    SG Micro Corp SGM850B-5.0QTHS10G/TR

    - Tape and Reel (Alt: SGM850B-5.0QTHS10G/TR)
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    Avnet Americas SGM850B-5.0QTHS10G/TR Tape & Reel 4,000
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    SG Micro Corp SGM850A-3.3QTHS10G/TR

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    Avnet Americas SGM850A-3.3QTHS10G/TR Tape & Reel 4,000
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    SG Micro Corp SGM2069QTHS10G/TR

    B43762B9109M600 - Tape and Reel (Alt: SGM2069QTHS10G/TR)
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    Avnet Americas SGM2069QTHS10G/TR Tape & Reel 4,000
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    SG Micro Corp SGM6627QTHS10G/TR

    - Tape and Reel (Alt: SGM6627QTHS10G/TR)
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    Avnet Americas SGM6627QTHS10G/TR Tape & Reel 4,000
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    Find more HS10G price and stock on Findchips.com

    HS10G Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    HS10G

    Abstract: InGaAs 1550 photodiode transimpedance amplifier Optical Receiver high sensitivity photodiode amplifier GR-468-CORE ampli 2002 Optical Receiver d1032
    Contextual Info: 10 Gbits/sec PIN-TIA optical receiver with pre-amp HS10G FEATURES • low dark current InGaAs PIN photodiode • integral optical pre-amplifier & high-gain TIA • high bandwidth & responsivity • low polarization sensitivity • hermetically-sealed butterfly package


    Original     		HS10G HS10G GR-468-CORE D1-03--2002 InGaAs 1550 photodiode transimpedance amplifier Optical Receiver high sensitivity photodiode amplifier ampli 2002 Optical Receiver d1032 PDF

    417 TRANSISTOR

    Abstract: d 417 transistor HS10G BIPOLAR TRANSISTOR two transistor forward IDTA9756CF4 RLP1N08LE 559 rca transistor 417
    Contextual Info: Logic-Level Power MOSFETs File N um b er RLP1N08LE 2252 Current Limited - ESD Protected N-Channel Enhancement-Mode Power Field-Effect Transistor 1 A, 80 V rDs on : 0.75 i l N -C H A N N E L E N H A N C E M E N T M OD E Inmit = 1.5 A Maximum at 150°C Features:


    OCR Scan     		RLP1N08LE RLP1N08LE T12SGIP1NMLCF4 417 TRANSISTOR d 417 transistor HS10G BIPOLAR TRANSISTOR two transistor forward IDTA9756CF4 559 rca transistor 417 PDF