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    HN1D03F Search Results

    HN1D03F Datasheets (8)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    HN1D03F
    		Toshiba Application Specific Diode Array Original PDF 206.73KB 4
    HN1D03F
    		Toshiba Silicon Epitaxial Planar Type Original PDF 148.16KB 3
    HN1D03FTE85LF
    		Toshiba Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, DIODE SW 80V 100MA SM6 Original PDF 4
    HN1D03FU
    		Toshiba Silicon epitaxial planar type diode for ultra high speed switching application Original PDF 215.77KB 5
    HN1D03FU
    		Toshiba DIODE Scan PDF 2.16MB 4
    HN1D03FU,LF
    		Toshiba Semiconductor and Storage Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE ARRAY GP 80V 80MA US6 Original PDF 256.64KB
    HN1D03FU(T5L,F,T)
    		Toshiba Diodes, Rectifiers - Arrays, Discrete Semiconductor Products, SWITCHING DIODE 80V CC/CA US6 Original PDF 5
    HN1D03FU(TE85L,F)
    		Toshiba HN1D03FU - Diode Switching 85V 0.08A 6-Pin US T/R Original PDF 273.02KB 5
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    HN1D03F Price and Stock

    Toshiba America Electronic Components

    Toshiba America Electronic Components HN1D03FU,LF

    DIODE ARRAY GP 80V 80MA US6
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    DigiKey () HN1D03FU,LF Digi-Reel 363 1
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    HN1D03FU,LF Cut Tape 363 1
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    HN1D03FU,LF Tape & Reel 3,000
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    Avnet Americas HN1D03FU,LF Tape & Reel 16 Weeks 3,000
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    Mouser Electronics HN1D03FU,LF
    • 1 $0.26
    • 10 $0.17
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    Toshiba America Electronic Components HN1D03FTE85LF

    DIODE ARRAY GP 80V 100MA SC-74
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    DigiKey () HN1D03FTE85LF Tape & Reel 3,000
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    HN1D03FTE85LF Cut Tape 1
    • 1 $0.41
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    HN1D03FTE85LF Digi-Reel 1
    • 1 $0.41
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    Mouser Electronics HN1D03FTE85LF
    • 1 $0.28
    • 10 $0.19
    • 100 $0.15
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    Toshiba America Electronic Components HN1D03FU,LF(T

    SMALL SIGNAL SW DIODE, 85V, SOT-363; Diode Configuration:Dual Common Cathode, Dual Common Anode; Repetitive Peak Reverse Voltage:85V; Average Forward Current:100mA; Forward Voltage Max:1.2V; Reverse Recovery Time:1.6ns RoHS Compliant: Yes
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    Newark HN1D03FU,LF(T Cut Tape 194 1
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    EBV Elektronik HN1D03FU,LF(T 22 Weeks 3,000
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    Toshiba America Electronic Components HN1D03FU TE85R

    Diode Switching Si 85V 0.1A 6-Pin US T/R
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    Bristol Electronics HN1D03FU TE85R 6,000
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    Toshiba America Electronic Components HN1D03F-T5LT

    Diode Switching 85V 0.1A 6-Pin SM T/R
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    Bristol Electronics HN1D03F-T5LT 3,000
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    Find more HN1D03F price and stock on Findchips.com

    HN1D03F Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    HN1D03F

    Contextual Info: T O S H IB A HN1D03F TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE HN1D03F ULTRA HIGH SPEED SWITCHING APPLICATION. • Unit in mm + 0.2 2.8 - 0.3 Built in Anode Common and Cathode Common. Unit 1 3 • Low Forward Voltage Q l, Q2 : Vp = 0.90V (Typ.) • Fast Reverse Recovery Time


    OCR Scan     		HN1D03F HN1D03F PDF

    HN1D03F

    Contextual Info: HN1D03F 東芝ダイオード シリコンエピタキシャルプレーナ形ダイオード HN1D03F ○ 超高速スイッチング用 単位: mm z アノードコモンとカソードコモンの 2 ユニットを内蔵。 Unit 1 Q1､Q2: VF 3 = 0.90V (標準)


    Original     		HN1D03F 100mA HN1D03F PDF

    Contextual Info: HN1D03FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03FU Unit: mm Ultra High Speed Switching Application z Built in anode common and cathode common. Unit 1 z Low forward voltage Q1, Q2: VF 3 = 0.90V (typ.) z Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.)


    Original     		HN1D03FU PDF

    HN1D03F

    Contextual Info: HN1D03F TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03F Unit: mm Ultra High Speed Switching Application l Built in anode common and cathode common. Unit 1 l Low forward voltage Q1, Q2: VF 3 = 0.90V (typ.) l Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.)


    Original     		HN1D03F HN1D03F PDF

    Contextual Info: SILICON EPITAXIAL PLANAR TYPE HN1D03FU ULTRA HIGH SPEED SW ITCHING APP LIC A TIO N . • U nit in mm Built in Anode Common and Cathode Common. U nit 1 • Low Forward Voltage Q l, Q2 : Vp = 0.90V Typ. • Fast Reverse Recovery Time Q l, Q2 : trr = 1.6ns (Typ.)


    OCR Scan     		HN1D03FU 100mA PDF

    Contextual Info: SILICON EPITAXIAL PLANAR TYPE HN1D03F Unit in ULTRA HIGH SPEED SWITCHING APPLICATION rm + 0.2 2.8 - 0 . 3 . Built in Anode Common and Cathode Common. 1.6 Unit 1 + 0.2 - 0.1 □ 3 . Low Forward Voltage Q1,Q2 Vp=0.90V Typ. . Fast Reverse Recovery Time Ql,Q2


    OCR Scan     		HN1D03F 100mA PDF

    Contextual Info: TOSHIBA HN1D03FU TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 1 D03FU ULTRA HIGH SPEED SWITCHING APPLICATION. U nit in mm • B uilt in Anode Common and Cathode Common. 2.1 Í 0.1 U nit 1 1.25±0.1 Low Forward Voltage Q l, Q2 : Vjp = 0.90V Typ. • Fast Reverse Recovery Time Q l, Q2 : tr r = 1.6ns (Typ.)


    OCR Scan     		HN1D03FU D03FU PDF

    Contextual Info: HN1D03FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03FU Unit: mm Ultra High Speed Switching Application z Built in anode common and cathode common. Unit 1 z Low forward voltage Q1, Q2: VF 3 = 0.90V (typ.) z Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.)


    Original     		HN1D03FU PDF

    HN1D03FU

    Abstract: TOSHIBA "ULTRA HIGH SPEED" DIODE
    Contextual Info: HN1D03FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03FU Unit: mm Ultra High Speed Switching Application Built in anode common and cathode common. Unit 1 Low forward voltage Q1, Q2: VF 3 = 0.90V (typ.) Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.)


    Original     		HN1D03FU HN1D03FU TOSHIBA "ULTRA HIGH SPEED" DIODE PDF

    Contextual Info: TOSHIBA HN1D03FU TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 1 D03FU ULTRA HIGH SPEED SWITCHING APPLICATION. U nit in mm • B uilt in Anode Common and Cathode Common. 2.1 db0.1 U nit 1 • Low Forward Voltage Q l, Q2 : Vjp = 0.90V Typ. • Fast Reverse Recovery Time Q l, Q2 : trr= 1.6ns (Typ.)


    OCR Scan     		HN1D03FU N1D03FU 100UG PDF

    HN1D03F

    Contextual Info: HN1D03F TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03F Unit: mm Ultra High Speed Switching Application Built in anode common and cathode common. Unit 1 Low forward voltage Q1, Q2: VF 3 = 0.90V (typ.) Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.)


    Original     		HN1D03F HN1D03F PDF

    HN1D03FU

    Contextual Info: HN1D03FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03FU Unit: mm Ultra High Speed Switching Application z Built in anode common and cathode common. Unit 1 z Low forward voltage Q1, Q2: VF 3 = 0.90V (typ.) z Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.)


    Original     		HN1D03FU HN1D03FU PDF

    Contextual Info: TOSHIBA HN1D03F TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N1 n n 3F m m m 'm m mmr w mm • Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. Built in Anode Common and Cathode Common. + 0.2 .1.6 -0.1. Unit 1 • Low Forward Voltage • Fast Reverse Recovery Time


    OCR Scan     		HN1D03F PDF

    Contextual Info: TOSHIBA HN1D03F TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE HN1D03F ULTRA HIGH SPEED SWITCHING APPLICATION. • Unit in mm + 0.2 Built in Anode Common and Cathode Common. 2.8-0.3 + 0.2 1.6 Unit 1 • Low Forward Voltage Q l, Q2 : VF 3 = 0.90V (Typ.) •


    OCR Scan     		HN1D03F PDF

    Contextual Info: HN1D03F TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03F Unit: mm Ultra High Speed Switching Application z Built in anode common and cathode common. Unit 1 z Low forward voltage Q1, Q2: VF 3 = 0.90V (typ.) z Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.)


    Original     		HN1D03F PDF

    HN1D03FU

    Contextual Info: HN1D03FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03FU Unit: mm Ultra High Speed Switching Application z Built in anode common and cathode common. Unit 1 z Low forward voltage Q1, Q2: VF 3 = 0.90V (typ.) z Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.)


    Original     		HN1D03FU HN1D03FU PDF

    Contextual Info: HN1D03FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03FU Ultra High Speed Switching Application Unit in mm Built in anode common and cathode common. Unit 1 Low forward voltage Q1, Q2: VF 3 = 0.90V (typ.) Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.)


    Original     		HN1D03FU 100mA PDF

    HN1D03FU

    Contextual Info: HN1D03FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03FU Unit: mm Ultra High Speed Switching Application l Built in anode common and cathode common. Unit 1 l Low forward voltage Q1, Q2: VF 3 = 0.90V (typ.) l Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.)


    Original     		HN1D03FU HN1D03FU PDF

    Contextual Info: HN1D03FU TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE h n i n n 3 F 11 m m m 'm m m mr v • ULTRA HIGH SPEED SWITCHING APPLICATION. U n it in mm • B u ilt in Anode Common and Cathode Common. TT. *j H unit x 2 .i± a i 1.25±0.1 • Low Forw ard Voltage


    OCR Scan     		HN1D03FU PDF

    HN1D03FU

    Contextual Info: TOSHIBA HN1D03FU TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 1 D03FU ULTRA HIGH SPEED SWITCHING APPLICATION. U n it in mm • B u ilt in Anode Common and Cathode Common. 2.1 db0.1 U n it 1 • Low Forward Voltage Q l, Q2 : Vjp = 0.90V Typ. • Fast Reverse Recovery Time Q l, Q2 : tr r = 1.6ns (Typ.)


    OCR Scan     		HN1D03FU N1D03FU HN1D03FU PDF

    Contextual Info: TOSHIBA HN1D03F TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE HN1D03F ULTRA HIGH SPEED SWITCHING APPLICATION. • Unit in mm Built in Anode Common and Cathode Common. 2 .8 + 0.2 0.3 - + 0.2 1.6 Unit 1 • Low Forward Voltage Q l, Q2 : VF 3 = 0.90V (Typ.) •


    OCR Scan     		HN1D03F PDF

    Contextual Info: HN1D03F TOSHIBA Diode Silicon Epitaxial Planar Type HN1D03F Unit: mm Ultra High Speed Switching Application z Built in anode common and cathode common. Unit 1 z Low forward voltage Q1, Q2: VF 3 = 0.90V (typ.) z Fast reverse recovery time Q1, Q2: trr = 1.6ns (typ.)


    Original     		HN1D03F PDF

    Contextual Info: HN1D03FU TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 1 D03FU ULTRA HIGH SPEED SWITCHING APPLICATION. U nit in mm • B uilt in Anode Common and Cathode Common. 2.Ü0.1 U nit 1 • Low Forward Voltage Q l, Q2 : Vjp = 0.90V Typ. • Fast Reverse Recovery Time Q l, Q2 : tr r = 1.6ns (Typ.)


    OCR Scan     		HN1D03FU D03FU PDF

    HN1D03FU

    Contextual Info: HN1D03FU 東芝ダイオード シリコンエピタキシャルプレーナ形ダイオード HN1D03FU ○ 超高速スイッチング用 単位: mm z アノードコモンとカソードコモンの 2 ユニットを内蔵。 Unit 1 Q1､Q2: VF 3 = 0.90V (標準)


    Original     		HN1D03FU HN1D03T 100mA HN1D03FU PDF