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    HFS4N50

    Contextual Info: BVDSS = 500 V RDS on HFS4N50 typ = 2.0 Ω ID = 3.4 A 500V N-Channel MOSFET TO-220F FEATURES  Originative New Design 1  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology 2 3 1.Gate 2. Drain 3. Source  Very Low Intrinsic Capacitances


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