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HFP8N60S Abstract: hfp8n60 *p8n60 Contextual Info: BVDSS = 600 V RDS on typ = 0.96 Ω HFP8N60S ID = 7.5 A 600V N-Channel MOSFET TO-220 FEATURES  Originative New Design 1  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology 2 3 1.Gate 2. Drain 3. Source  Very Low Intrinsic Capacitances	Original	hfp8n60s o-220 54typ hfp8n60 +1p8n60	PDF

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HFP8N60S

Abstract: hfp8n60 *p8n60
Contextual Info: BVDSS = 600 V RDS on typ = 0.96 Ω HFP8N60S ID = 7.5 A 600V N-Channel MOSFET TO-220 FEATURES  Originative New Design 1  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology 2 3 1.Gate 2. Drain 3. Source  Very Low Intrinsic Capacitances

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hfp8n60s o-220 54typ hfp8n60 +1

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