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    hfp12n65s

    Contextual Info: BVDSS = 650 V RDS on typ = 0.67 Ω HFP12N65S ID = 12 A 650V N-Channel MOSFET TO-220 FEATURES  Originative New Design 1  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology 2 3 1.Gate 2. Drain 3. Source  Very Low Intrinsic Capacitances


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