Abstract: HFI640 Contextual Info: BVDSS = 200 V RDS on typ = 0.145Ω HFW640 / HFI640 ID = 18 A 200V N-Channel MOSFET D2-PAK I2-PAK 2 FEATURES 1 1 3 Originative New Design 2 3 HFW640 Superior Avalanche Rugged Technology Robust Gate Oxide Technology HFI640 1.Gate 2. Drain 3. Source