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HFD1N60S Abstract: hfu1n60s 453 oc Contextual Info: BVDSS = 600 V RDS on typ = 10 Ω HFD1N60S / HFU1N60S ID = 1.0 A 600V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 2 3  Originative New Design 3 HFD1N60S  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology HFU1N60S 1.Gate 2. Drain 3. Source	Original	HFD1N60S HFU1N60S HFD1N60S O-252 O-251 hfu1n60s 453 oc	PDF

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HFD1N60S

Abstract: hfu1n60s 453 oc
Contextual Info: BVDSS = 600 V RDS on typ = 10 Ω HFD1N60S / HFU1N60S ID = 1.0 A 600V N-Channel MOSFET D-PAK I-PAK 2 FEATURES 1 1 2 3  Originative New Design 3 HFD1N60S  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology HFU1N60S 1.Gate 2. Drain 3. Source

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HFD1N60S HFU1N60S HFD1N60S O-252 O-251 hfu1n60s 453 oc

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