HF06A060ACE
Abstract: HFA04TB60 20596
Contextual Info: Preliminary Data Sheet PD-20596 rev. A 11/98 HF06A060ACE Hexfred Die in Wafer Form 600 V Size 06 5" Wafer Electrical Characteristics Wafer Form Parameter Description V FM Forward Voltage BV R Reverse Breakdown Voltage IRM Reverse Leakage Current Guaranteed (Min/Max)
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pd-20596hf06a060ace125mmhfa04tb60+120596
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HF06A060ACE
Abstract: HFA04TB60 20596
Contextual Info: Preliminary Data Sheet PD-20596 rev. A 11/98 HF06A060ACE Hexfred Die in Wafer Form 600 V Size 06 5" Wafer Electrical Characteristics Wafer Form Parameter Description V FM Forward Voltage BV R Reverse Breakdown Voltage IRM Reverse Leakage Current Guaranteed (Min/Max)
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pd-20596hf06a060ace12-mar-07hfa04tb60+120596
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IN1190A diode
Abstract: an 80771 hfa30pa60 SCR gate drive circuit A6F diode HFA120FA60 HF50A060 IN1190 DT93-1 HFA16PB120
Contextual Info: Revised 5/11/99 www.irf.com Rectifiers / Thyristors Catalog of Available Documents IR ProCenter Fax-On-Demand 310 252-7100 Standard Recovery Diodes Description Datasheets 1N1183 - IN1190 Series 1N1183A - IN1190A Series 1N1199A - 1N1206A Series 1N2054 thru 1N2068 Series
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1n1183in11901n1183ain1190a+151n1199a1n1206a1n20541n20681n3085-1n3092in1190a diodean 80771hfa30pa60scr gate drive circuita6f diodehfa120fa60hf50a060dt93-1hfa16pb120
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