H5N2005DS Search Results

H5N2005DL

Abstract: H5N2005DL-E H5N2005DS H5N2005DSTL-E PRSS0004ZD-B PRSS0004ZD-C
Contextual Info: H5N2005DL, H5N2005DS Silicon N Channel MOS FET High Speed Power Switching REJ03G1104-0300 Rev.3.00 Mar 05, 2009 Features • Low on-resistance • Low drive power • High speed switching Outline RENESAS Package code: PRSS0004ZD-B Package name: DPAK(L -(2) )

H5N2005DSTL-E

Abstract: H5N2005DL H5N2005DL-E H5N2005DS PRSS0004ZD-B PRSS0004ZD-C
Contextual Info: H5N2005DL, H5N2005DS Silicon N Channel MOS FET High Speed Power Switching REJ03G1104-0200 Previous: ADE-208-1373 Rev.2.00 Sep 07, 2005 Features • Low on-resistance • Low drive current • High speed switching Outline RENESAS Package code: PRSS0004ZD-B

Contextual Info: Preliminary Datasheet H5N2005DL, H5N2005DS R07DS0796EJ0400 Previous: REJ03G1104-0300 Rev.4.00 Jun 07, 2012 200V - 6A - MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.52  typ. (at ID = 3 A, VGS = 10 V, Ta = 25C)  Low drive power

Contextual Info: Preliminary Datasheet H5N2005DL, H5N2005DS R07DS0796EJ0400 Previous: REJ03G1104-0300 Rev.4.00 Jun 07, 2012 200V - 6A - MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.52  typ. (at ID = 3 A, VGS = 10 V, Ta = 25C)  Low drive power

Hitachi DSA0076

Abstract: H5N2005DL H5N2005DS Silicon N Channel MOS FET High Speed Power Switching dpak code
Contextual Info: H5N2005DL, H5N2005DS Silicon N Channel MOS FET High Speed Power Switching ADE-208-1373 Z Target Specification 1st. Edition Mar. 2001 Features • Low on-resistance • Low drive current • High speed switching Outline DPAK-2 4 4 1 2 D 3 H5N2005DS G 1 2

IRF1830G

Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
Contextual Info: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23

H5N2005DSTL-E

Abstract: H5N2005DL H5N2005DL-E H5N2005DS PRSS0004ZD-B PRSS0004ZD-C NEC sc-63 date code
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

rjp3053

Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
Contextual Info: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5

H5N2005DL

Abstract: H5N2005DS
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog