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    GY20N120D Search Results

    GY20N120D Datasheets Context Search

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    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet Insulated Gate Bipolar Transistor with Anti-Parallel Diode M GY20N120D Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate IGBT & DIODE IN TO-264 20 A @ 90°C 28 A @ 25 C 1200 VOLTS


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    O-264 0E-05 0E-01 PDF