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    Part ECAD Model Manufacturer Description Download Buy
    GT40WR21
    		Toshiba Electronic Devices & Storage Corporation IGBT, 1800 V, 40 A, Built-in Diodes, TO-3P(N) Datasheet

    GT40WR21 Datasheets (1)

    Toshiba
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    GT40WR21
    		Toshiba GT40WR21 - Discrete IGBTs, GT40WR21 Original PDF 128.39KB 5
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    GT40WR21 Price and Stock

    Toshiba America Electronic Components

    Toshiba America Electronic Components GT40WR21,Q(O

    Transistor: IGBT; 1.8kV; 40A; 375W; TO3PN
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    TME GT40WR21,Q(O 32 1
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    Newark GT40WR21,Q(O Bulk 109 1
    • 1 $9.57
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    EBV Elektronik GT40WR21,Q(O 100 21 Weeks 100
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    Toshiba America Electronic Components GT40WR21,Q

    IGBT N-Channel 1800V 3-Pin TO-3P(N) - Trays (Alt: GT40WR21,Q)
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    Avnet Americas GT40WR21,Q Tray 100
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    Mouser Electronics GT40WR21,Q 35
    • 1 $12.35
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    GT40WR21 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: GT40WR21 Discrete IGBTs Silicon N-Channel IGBT GT40WR21 1. Applications • Dedicated to Voltage-Resonant Inverter Switching Applications Note: The product s described herein should not be used for any other application. 2. Features (1) 6.5th generation (2)


    Original     		gt40wr21 PDF

    Contextual Info: GT40WR21 Discrete IGBTs Silicon N-Channel IGBT GT40WR21 1. Applications • Dedicated to Voltage-Resonant Inverter Switching Applications Note: The product s described herein should not be used for any other application. 2. Features (1) 6.5th generation (2)


    Original     		gt40wr21 PDF

    GT40WR21

    Contextual Info: GT40WR21 Discrete IGBTs Silicon N-Channel IGBT GT40WR21 1. Applications • Dedicated to Voltage-Resonant Inverter Switching Applications Note: The product s described herein should not be used for any other application. 2. Features (1) 6.5th generation (2)


    Original     		gt40wr21 PDF