GS74104ATP Search Results

GS74104A

Abstract: GS74104ATP-10 GS74104ATP-10I GS74104ATP-12 GS74104ATP-12I GS74104ATP-6 GS74104ATP-6I GS74104ATP-8 GS74104ATP-8I
Contextual Info: GS74104ATP/J SOJ, TSOP Commercial Temp Industrial Temp 1M x 4 4Mb Asynchronous SRAM Features 6, 8, 10, 12 ns 3.3 V VDD Center VDD and VSS SOJ 1M x 4-Pin Configuraton • Fast access time: 6, 8, 10, 12 ns • CMOS low power operation: 155/120/95/85 mA at minimum

Contextual Info: GS74104ATP/J SOJ, TSOP Commercial Temp Industrial Temp 1M x 4 4Mb Asynchronous SRAM Features 8, 10, 12 ns 3.3 V VDD Center VDD and VSS SOJ 1M x 4-Pin Configuraton • Fast access time: 8, 10, 12 ns • CMOS low power operation: 120/95/85 mA at minimum cycle time

ua 471

Abstract: GS74104A GS74104ATP-10 GS74104ATP-10I GS74104ATP-12 GS74104ATP-12I GS74104ATP-8 GS74104ATP-8I
Contextual Info: GS74104ATP/J SOJ, TSOP Commercial Temp Industrial Temp 8, 10, 12 ns 3.3 V VDD Center VDD and VSS 1M x 4 4Mb Asynchronous SRAM Features SOJ 1M x 4-Pin Configuraton • Fast access time: 8, 10, 12 ns • CMOS low power operation: 120/95/85 mA at minimum cycle time

ua 471

Abstract: 74104 GS74104A GS74104ATP-10 GS74104ATP-10I GS74104ATP-12 GS74104ATP-12I GS74104ATP-7 GS74104ATP-7I GS74104ATP-8
Contextual Info: GS74104ATP/J SOJ, TSOP Commercial Temp Industrial Temp 1M x 4 4Mb Asynchronous SRAM Features 7, 8, 10, 12 ns 3.3 V VDD Center VDD and VSS SOJ 1M x 4-Pin Configuraton • Fast access time: 7, 8, 10, 12 ns • CMOS low power operation: 135/120/95/85 mA at minimum

Contextual Info: GS74104ATP/J SOJ, TSOP Commercial Temp Industrial Temp 1M x 4 4Mb Asynchronous SRAM Features 8, 10, 12 ns 3.3 V VDD Center VDD and VSS SOJ 1M x 4-Pin Configuraton • Fast access time: 8, 10, 12 ns • CMOS low power operation: 130/105/95 mA at minimum cycle time

Contextual Info: GS74104ATP TSOP Commercial Temp Industrial Temp 8, 10, 12 ns 3.3 V VDD Center VDD and VSS 1M x 4 4Mb Asynchronous SRAM Features TSOP-II 1M x 4-Pin Configuration • Fast access time: 8, 10, 12 ns • CMOS low power operation: 120/95/85 mA at minimum cycle time

74104

Abstract: GS74104A GS74104ATP-10 GS74104ATP-10I GS74104ATP-12 GS74104ATP-12I GS74104ATP-8 GS74104ATP-8I
Contextual Info: GS74104ATP/J SOJ, TSOP Commercial Temp Industrial Temp 8, 10, 12 ns 3.3 V VDD Center VDD and VSS 1M x 4 4Mb Asynchronous SRAM Features SOJ 1M x 4-Pin Configuraton • Fast access time: 8, 10, 12 ns • CMOS low power operation: 120/95/85 mA at minimum cycle time

Contextual Info: GS74104ATP TSOP Commercial Temp Industrial Temp 8, 10, 12 ns 3.3 V VDD Center VDD and VSS 1M x 4 4Mb Asynchronous SRAM Features TSOP-II 1M x 4-Pin Configuration • Fast access time: 8, 10, 12 ns • CMOS low power operation: 120/95/85 mA at minimum cycle time

Contextual Info: GS74104ATP/J/X SOJ, TSOP, FP-BGA Commercial Temp Industrial Temp 1M x 4 4Mb Asynchronous SRAM Features 6, 7, 8, 10, 12 ns 3.3 V VDD Center VDD and VSS SOJ 1M x 4-Pin Configuraton • Fast access time: 6, 7, 8, 10, 12 ns • CMOS low power operation: 155/135/120/95/85 mA at

GS74104A

Abstract: GS74104ATP-10 GS74104ATP-10I GS74104ATP-12 GS74104ATP-12I GS74104ATP-8 GS74104ATP-8I
Contextual Info: GS74104ATP/J SOJ, TSOP Commercial Temp Industrial Temp 8, 10, 12 ns 3.3 V VDD Center VDD and VSS 1M x 4 4Mb Asynchronous SRAM Features SOJ 1M x 4-Pin Configuraton • Fast access time: 8, 10, 12 ns • CMOS low power operation: 120/95/85 mA at minimum cycle time

K7A803609B-PC25

Abstract: K7A403600B-PC16 K7I161882B-EC16 K6R4016V1D-TC08 K7A403600M-QC16 K7I161882B-EC30 K6R4008V1C-JC12 K6R4016V1D-UC10 K6R1008V1C-JC10 K7R643682M-FC20
Contextual Info: SAMSUNG # - Connect pin 14 FT pin to Vss * - Tie down extra four I/Os with resistor K6R1016V1C-FC10 K6R1016V1C-FC12 K6R1016V1C-FC15 K6R1016V1C-FC20 K6R1016V1C-JC10 K6R1016V1C-JC12 K6R1016V1C-JC15 K6R1016V1C-JC20 K6R1016V1C-TC10 K6R1016V1C-TC12 K6R1016V1C-TC15