GM006 Search Results

BPX43

Abstract: Q62702-P16 Q62702-P16-S2 Q62702-P16-S3 Q62702-P16-S4 SIEMENS Phototransistors Siemens photodiode
Contextual Info: SIEMENS NPN-Silizium-Fototransistor Silicon NPN Phototransistor Radiant sensitive area Chip position 2.7 00.45 \ . 1^.5 12.5 ^ —i . 5.1 BPX 43 \ \vb> E C B A ? ' ' ' t 00 CO '«sí '•sj- x#;x: 1 4.8 —» 6.2 ♦ 5.4 GM006019 O “o Approx. weight 1.0 g

Contextual Info: SIEMENS GaAIAs-Lumineszenzdiode 660 nm GaAIAs Light Emitting Diode (660 nm) SFH 4860 Chip position 14.5 12.5 LO o ö (2 .7 ) E 0)1 CO LO cp Q _- c \i w J Cathode 4.05 3.45 Flat glass cap 02.54 GM006983 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

siemens maf

Contextual Info: SIEMENS GaAIAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode (660 nm) SFH 4860 Chip position - 12.5 " E o> e -f _7 o LO Q_ Csi « 04.8 LO o Q y Cathode 4.05 Flat glass cap 02.54 GM006983 M aße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

GM001

Abstract: GM006-SD00 GM-001
Contextual Info: PS-CVE006-0508 Micro DC-DC converter GM006-SD00 Features ・ New product, high efficiency and micro converter GM006 series ・ Higher power density in thin package tham existing models *improved 23% from previous product GM001 model ・ High Switching frequency: External I/O capacitor can be reduced

Contextual Info: Bauelemente fur die LW L-Technik und Leistungslaser Maflbilder inmm Figure 1 Outline drawings (in mm) SFH 250, SFH 750 SFH 450 Area nol flat ^ tstjta Anode Cathode 1.2 L Sem iconductor Devices for FiberOptic-System s and High-Power Lasers 29 27 J 4.6 7.8 .

BPX61

Abstract: Siemens Si PIN photodiode GM006011
Contextual Info: SIEMENS BPX 61 Silicon Photodiode Dimensions in inches mm .570 ¡14.5) .134 (3.4) '.116(3.0) .491 (12.5) Cathode 'SI Radiant sensitive area t 0.373(9.5) 0 .354 (9.0) ‘0 .326 (8.3) 0.314(8.0) .200 (5.08) Tc — 0 .018 (0.45) .069(1.75) .061 (1.55)" >39(1.0)

UCS-5801H

Abstract: UCS-5800H
Contextual Info: 5 8 0 0 an» 5 8 0 1 MIL-STD-S8U COMF1 J A M BiMOS II LATCHED DRIVERS Simplifying interface between LSI and peripheral power loads, the hermetically sealed UCS5800H 4-bit and UCS5801H (8-bit) latched drivers combine the advantages of CMOS logic and control and highvoltage, high-current bipolar output buffers. Typical applications include

Bpx 95

Abstract: bpx61
Contextual Info: SIEMENS BPX61 Silicon Photodiode Dimensions in inches mm .134 (3.4) '.118(3.0) .570 (14.5) .491 (12.5) Cathode Radiant sensitive area \ 0 .373 (9.5) 0 .354 (9.0) 0 .326 (8.3) 0 .314(8.0) .200 (5.08) Jr 0.236 (6.0) 0.228 (5.8) L .L T“ c 0 .018(0.45) .069(1.75)

UCS5810H

Abstract: UCS5810H883 UCS5815H Serial Latched Source Driver
Contextual Info: ucn/ 5810 MIL-STD-883 COMPLIANT BiMOS n 10-BIT SERIAL-INPUT, LATCHED SOUBCE DRIVER Combining low-power CM O S logic with bipolar source drivers, Type UCS5810H will simplify many display-system designs. Primarily intended for use with vacuum-fluorescent displays, this BiMOS 10-bit

Contextual Info: SBH 51414X BIDI Transceiver Optical Module 1300 nm Em itting-/1550 nm Receiving Function, High Power • • • • • • Designed for application in passive-optical networks Integrated Wavelength Division Multiplexer Bidirectional Transmission in 2nd and 3rd optical window

STH81002Z

Abstract: laser diode 1550 nm 81001Z STH81001Z
Contextual Info: C IEM C M C J IL IT Ib lU J 1550 nm Laser in Coaxial TO -Package STH 81001Z • • • • Designed for appiication in fiber-optic networks Laser Diode with Multi-Quantum Well structure Suitable for bit rates up to 1 Gbit/s Ternary photodiode at rear mirror for monitoring and

Contextual Info: 5810 M IL-STD-NN H C O M F 1 J A M BiMOS U 10-BIT SERIAL-INPUT, LATCHED SOURCE DRIVER OUT g Combining low-power CMOS logic with bipolar source drivers, Type UCS5810H will simplify many display-system designs. Primarily intended for use with vacuum-fluorescent displays, this BiMOS 10-bit

SFH302

Abstract: SFH203 IRF 426
Contextual Info: Si-Fotodetektoren und IR-Lumineszenzdioden Silicon Photodetectors and Infrared Emitters Outline drawings in mm Maßbilder (in mm) Figure 1 S u r 'a c e no* f la t in i Ö! °! Q .8 n a x ° G 1 GND 9.0 y t ' 0.5 S. ¡ 5.9 7.8 7.5 oo m ö o ¡ f t 1 C athode

SFH 910

Abstract: BPX61 Q62902-B166 SFH 910 235 SFH463 sfh 309 fr SFH405-2 l71ii IM 317 ld271a
Contextual Info: IR-Lumineszenzdioden Infrared Emitters 7. Infrarot Indikatorkarte 7. Infrared Indicator Card B e i B e s tr a h lu n g le u c h t e t d ie a k tiv e F lä c h e o r a n g e a u f, w o d u r c h IR - S tra h ­ W h e n th e a c tiv e a r e a is e x p o s e d to r a d ia tio n it e m its o r a n g e lig h t, th u s

Contextual Info: M il.-S T D -S iS S C O M BiMOS n 10-BIT SERIAL-INPUT, LATCHED SOURCE DRIVER 18 H h LAI C ^i j 17 OUT10 16 SERIAL DATA OUT VBB 15 14 RE OUT* BLNK 13 LOAD SUPPLY SERIAL DATA IN BLANKING 12 OUT, 11 out2 10 out3 Dwg. PP-029 ABSOLUTE MAXIMUM RATINGS at +25°C Free-Air Temperature

Siemens 221

Contextual Info: SIEMENS Silizium-Differential-Fotodiode Silicon Differential Photodiode Chip position SFH 221 S R a d ia n t sen sitive a re a t— 2.0 A node in o ro o ooo o i cdOO CO LT O ) r 'S. • . “ n . B u . Ím w 5 l 3 .0 1 4 .5 A node A / " 1 2 .5 “ M etal c ase

Contextual Info: SIEMENS Silizium-Fotodiode für den sichtbaren Spektralbereich Silicon Photodiode for the visible spectral range Chip position Cathode 1.75 1.55 0 0 .4 5 -L LO O í'O O en o> oo co ^ ^ r ~ r 0.3m ax- P 3.4 3.0 A. BPW 21 Radiant sensitive area / 1* im « 14.5

Contextual Info: BPX60 SIEMENS Enhanced Blue Sensitivity Silicon PhotocHode Dimensions in inches mm .134(3.4) *.118(3.0) .570(14.5) .491 (12.5) Cathode T _L_ 0 .373 (9.5) 0 .354 (9.0) fe .326 (8.3) 0 .314 (8.G) .200 (5.08) ~rc Radiant sensitive area _L 0.236(6.0) 0.228 (5.8)