GF0906B Search Results
GF0906B Price and Stock
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Mitsubishi Electric MGF0906BL, S BAND POWER GAAS FET RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Junction FET |
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MGF0906B | 525 |
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Mitsubishi Electric MGF0906B01RF Power Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET |
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MGF0906B01 | 40 |
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Others MGF0906B-01INSTOCK |
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MGF0906B-01 | 2 |
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GF0906B Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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MGF0906BContextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M GF0906B L, S BAND POW ER GaAs FET DESCRIPTION OUTLINE DRAWING The M G F 0 9 0 6 B , GaAs FET w ith an N-channel schottky Unit: millimeters gate, is designed for use in UHF band amplifiers. FEATURES • Class A operation |
OCR Scan |
MGF0906B MGF0906B, 37dBm GF-21 MGF0906B |