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GE1003, Datasheets (28)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
GE1003	Harris Semiconductor	1.0A Iout, 150V Vrrm Fast Recovery Rectifier	Scan	PDF	93.85KB	3
GE1003	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF	37.94KB	1
GE1003	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	85.55KB	1
MMDT4401(RANGE:100-300)	JCET Group	Dual NPN transistor in SOT-363 package with 60 V collector-base voltage, 40 V collector-emitter voltage, 0.6 A continuous collector current, and 250 MHz transition frequency for low power amplification and switching applications.	Original	PDF
MMDT5401(RANGE:100-300)	JCET Group	Dual PNP transistor in SOT-363 package with 150 V collector-emitter voltage, 200 mA continuous collector current, 100 MHz transition frequency, and DC current gain up to 300.	Original	PDF
MMST5551(RANGE:100-300)	JCET Group	NPN transistor in SOT-323 package, rated for 160V VCEO, 600mA collector current, 200mW power dissipation, with transition frequency up to 300MHz, suitable for medium power amplification and switching applications.	Original	PDF
MMBT3906T(RANGE:100-300)	JCET Group	PNP transistor in SOT-523 package with -40V collector-base and collector-emitter voltage, -200mA continuous collector current, 150mW power dissipation, and DC current gain up to 300.	Original	PDF
2N4403-TA(RANGE:100-300)	JCET Group	PNP transistor in TO-92 package with -40V collector-base and collector-emitter voltage, -600mA continuous collector current, 0.625W power dissipation, and DC current gain (hFE) up to 300.	Original	PDF
FMMT591(RANGE:100-300)	JCET Group	PNP transistor in SOT-23 package with -60 V collector-emitter breakdown voltage, -1 A continuous collector current, 250 mW power dissipation, and DC current gain up to 300, suitable for general-purpose switching applications.	Original	PDF
PXT3904(RANGE:100-300)	JCET Group	NPN transistor in SOT-89-3L package with 40V collector-emitter voltage, 0.2A continuous collector current, 0.5W power dissipation, and transition frequency of 300MHz, suitable for low current and low voltage applications.	Original	PDF
PXT2222A(RANGE:100-300)	JCET Group	NPN transistor in SOT-89-3L package with 40V collector-emitter voltage, 600mA continuous collector current, 0.5W power dissipation, and DC current gain up to 300, suitable for general-purpose switching and amplification applications.	Original	PDF
MMBT2907A(RANGE:100-300)	JCET Group	MMBT2907A is a PNP transistor in SOT-23 package with -60V collector-base and collector-emitter voltage, -600mA continuous collector current, 250mW power dissipation, and DC current gain up to 300.	Original	PDF
MMDT5551(RANGE:100-300)	JCET Group	Dual NPN transistor in SOT-26 package, with 160 V collector-emitter voltage, 0.2 A continuous collector current, 100 MHz transition frequency, and 0.2 W power dissipation, suitable for medium power amplification and switching applications.	Original	PDF
MMBT3904-G(RANGE:100-300)	JCET Group	MMBT3904 NPN transistor in SOT-23 package with 40V collector-emitter voltage, 200mA collector current, 200mW power dissipation, DC current gain from 100 to 300, and transition frequency of 300MHz.	Original	PDF

MMDT2227(RANGE:100-300)	JCET Group	Dual transistor in SOT-363 package containing one NPN 2222A and one PNP 2907A, each with 600 mA continuous collector current, 200 mW power dissipation, and suitable for amplification and switching applications.	Original	PDF
MMDT4403(RANGE:100-300)	JCET Group	Dual PNP transistor in SOT-363 package with -40V collector-base and collector-emitter breakdown voltage, -0.6A continuous collector current, 0.2W power dissipation, and transition frequency of 200MHz.	Original	PDF
MMST5401(RANGE:100-300)	JCET Group	PNP transistor in SOT-323 package with -150 V collector-emitter voltage, -600 mA collector current, 200 mW power dissipation, and transition frequency of 100 MHz.	Original	PDF
A92(RANGE:100-300)	JCET Group	PNP transistor in SOT-89-3L package with -305V collector-emitter breakdown voltage, -200mA continuous collector current, 500mW power dissipation, and DC current gain up to 300.	Original	PDF
2N4403(RANGE:100-300)	JCET Group	2N4403 PNP transistor in TO-92 package with collector-base voltage of -40V, collector current up to -600mA, DC current gain up to 300, transition frequency of 200MHz, and collector power dissipation of 0.625W.	Original	PDF
FZT955(RANGE:100-300)	JCET Group	PNP transistor in SOT-223 package with -140V collector-emitter voltage, -4A collector current, 0.8W power dissipation, and high DC current gain, suitable for high-voltage switching applications.	Original	PDF

GE1003, Price and Stock

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Rochester Electronics LLC GE1003 DIODE STANDARD 150V 1A TO204AE
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	GE1003	Bulk	1,808		568	1 - 10 - 100 - 1000 $0.53 10000 $0.53	Buy Now
Harris Semiconductor GE1003 GE1003
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	GE1003		1,808		789	1 - 10 - 100 - 1000 $0.44 10000 $0.39	Buy Now
Rochester Electronics	GE1003		1,808		1	1 - 10 - 100 $0.42 1000 $0.35 10000 $0.31	Buy Now
SMC Corporation of America KGE10-03 FITTING ,BULKHEAD CONNECTOR, KG SERIES
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	KGE10-03	Bulk			2	1 - 10 $60.84 100 $60.84 1000 $60.84 10000 $60.84	Get Quote
SMC Corporation of America 10-KGE10-03 FITTING ,BULKHEAD CONNECTOR, ST STEEL, KG SERIES
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
RS	10-KGE10-03	Bulk		5 Weeks	1	1 $61.10 10 $61.10 100 $61.10 1000 $61.10 10000 $61.10	Get Quote

GE1003, Search Results

GE1003, Datasheets (28)

GE1003, Price and Stock

Rochester Electronics LLC GE1003

Harris Semiconductor GE1003

SMC Corporation of America KGE10-03

SMC Corporation of America 10-KGE10-03