GE006137 Search Results

Contextual Info: SIEMENS GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter SFH 405 1.15 09? 0.5 0.4 t 2.54 spacing Collector SFH 305 Cathode (SFH 405) - o - 1) Detaching area for tools, flash not true to size. Approx. weight 0.02 g GE006137 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.

Contextual Info: SIEMENS Mini-NPN-Silizium-Fototransistor Mini-Silicon NPN Phototransistor 2.84 2.24 1.15. 0.90 SFH 305 COICN IO O •o m . io Cvi 0.15 05 0.4 hJ U 2.1 1.5 2.54 spacing Collector (SFH 305 Cathode (SFH 405) GE006137 1) Detaching area for tools, flash not true to size.

Contextual Info: SFH305 Silicon NPN Phototransistor Dimensions in inches mm .112 Detaching area for tools. Flash not true to s iz e ) — (2.84) (2.24) .045 (1.15) .088 035 (0.9) .106 (2.7) .098 (2.5) .075 (1.9) .067(1.7) T 138'(3.5) 118(3.0) .142 (3.6) .126 (3.2) .118(3.0)

Contextual Info: SFH305 SIEMENS Silicon NPN Phototransistor Dimensions in inches mm Detaching area for tools Flash not true to size .142 (3.6) .126 (3.2) .045 (1.15) .035 (0.9) .075(1.9) .067(1.7) .118(3.0) .098 2.5) .138(3.5) .010 (.25) .118(3.0) .006 (.IS P Cathode TTOO-^J

Contextual Info: SFH405 SIEMENS Infrared Emitter Dimensions In inches mm .045(1.15) \03 5 (0.9) .142(3.6) .126 (3.2) Detaching area for tools, Flash not true to size. .118(3.0) .010 (.25) .006 (.15)-' FEATURES • GaAs IR emitter, made in liquid phase epitaxy process • High reliability