GAP1000 Search Results

Contextual Info: GAP 500 GAP1000 GAP2000 GAP3000 □ Electrical Characteristics @ 25 °C GAP500 Active Diameter GAP 1000 GAP2000 GAP3000 mm 0.5 1.0 2.0 3.0 Responsivity @ 850nm 0.10 0.20 0.10 (0.20) 0.10 (0.20) 0.10 (0.20) AAV min. (typ.) 1300nm 0.80 (0.90) 0.80 (0.90) 0.80 (0.90)

GAP1000

Abstract: AC204 TO46 TO46 package GAP100 photoreceiver
Contextual Info: G OPTOELECTRONIC PRODUCTS Large Area InGaAs Photo-receiver: • 800 to 1700 nm. • TO-46 package • Differential output • ST, FC, SMA connectors available GPD is pleased to announce the availability of a large-area InGaAs pin photodiode mounted with a transimpedance amplifier in a TO-46 can. The specifications on this sheet are

GAP2000

Abstract: GAP500 photodetector 1550nm GAP3000 GAP1000 GAP100 ingaas photodetector
Contextual Info: InGaAs Photodetector Large Area InGaAs Photodetectors Special Options: ● ● ● Thermal-Electric Coolers Active Mounts Neutral Density Filters ● ● ● Custom Devices and Packaging Amplified Devices Two Color Electrical Characteristics @ 25°C GAP500

GAP1000

Abstract: GAP2000 GAP3000 GAP500 GAP100 GAP3000 GPD GPD optoelectronics PHOTO GAP DETECTOR GAP5000 GAP300
Contextual Info: GPD GAP 500 GAP 1000 GAP 2000 GAP 3000 GAP 5000 OPTOELECTRONICS CORP. Large Area InGaAs Photodiodes • High Responsivity • High Shunt Resistance • Low Capacitance: High Speed • Planar Design for High Reliability GPD Optoelectronics Corp. GAP 500 GAP 1000

GAP500

Abstract: GAP1000
Contextual Info: GPD GAP 500 GAP 1000 GAP 2000 GAP 3000 GAP 5000 OPTOELECTRONICS CORP. Large Area InGaAs Photodiodes • High Responsivity • High Shunt Resistance • Low Capacitance: High Speed • Planar Design for High Reliability GPD Optoelectronics Corp. GAP 500 GAP 1000