GA200SA60U Search Results

Contextual Info: PD -50066A GA200SA60U Ultra-FastTM Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for minimum saturation voltage and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

ga200sa60up

Abstract: N-CHANNEL INSULATED GATE TYPE
Contextual Info: GA200SA60UP Vishay High Power Products Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

e789

Abstract: ic 3020
Contextual Info: GA200SA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

GA200SA60UP

Contextual Info: GA200SA60UP Vishay High Power Products Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

Contextual Info: GA200SA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

Contextual Info: GA200SA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

Contextual Info: International lö R R ectifi 0r PD -5.066 P R E LIM IN A R Y GA200SA60U Ultra-Fast Speed IGBT INSULATED GATE BIPOLARTRANSISTOR F eatu res • U ltraFast: O p tim ize d for m inim um saturation voltage V ces = 600V a nd operating freq u en cies up to 4 0 k H z in hard

Contextual Info: GA200SA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

Contextual Info: VS-GA200SA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

Contextual Info: GA200SA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

Contextual Info: GA200SA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

Contextual Info: VS-GA200SA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: optimized for minimum saturation voltage and speed up to 30 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

TRANSISTOR ASY 0.25 W

Abstract: c103 a ge
Contextual Info: PD - 5.066 International I R Rectifier GA200SA60U INSULATED GATE BIPOLAR TRANSISTOR Ultra-Fast Speed IGBT Features • U ltra F a st: O p tim ize d fo r m in im um satu ra tion vo lta g e a n d op e ra tin g fre q u e n cie s up to 4 0 kH z in hard sw itch ing , > 2 0 0 kH z in re so n a n t m ode

GA200SA60U

Abstract: k241
Contextual Info: PD -50066A GA200SA60U Ultra-FastTM Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for minimum saturation voltage and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

Contextual Info: GA200SA60UP Vishay High Power Products Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

Contextual Info: Bulletin I27236 07/06 GA200SA60UP Ultra-FastTM Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for minimum saturation voltage and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

ga200sa60up

Contextual Info: Bulletin I27236 07/06 GA200SA60UP Ultra-FastTM Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for minimum saturation voltage and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

SOT-227 heatsink

Abstract: GA200SA60U
Contextual Info: PD -5.066 PRELIMINARY GA200SA60U Ultra-FastTM Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for minimum saturation voltage and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

irfb4115

Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

IRU1239SC

Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Contextual Info: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK

HEXFET

Abstract: GA200TD120U GA500TD60U GA100TS60U
Contextual Info: International Rectifier COLOR CODING: EXISTING Products The Switch Module Navigator NEW Products released to production in last 69 months UPCOMING Products to be released within next 3-4 months POTENTIAL Products no current plans. see bus.mgmt. Effective 14 June, 1999

IRG41BC20W

Abstract: IRG41BC20UD Drive circuit for IGBT using IR2130 IR2184 application notes IR2110 driver CIRCUIT FOR INVERTERS DC MOTOR SPEED CONTROL USING IGBT IRG41BC30W IR2181 application notes IR2103 bldc driver 1KW dc motor
Contextual Info: TABLE OF CONTENTS Selection Guides Fast Diode Die Data Sheets FRED Die Data Sheets HEXFET Power MOSFET Die Data Sheets HEXFRED® Rectifier Die Data Sheets IC Data Sheets IGBT Die Data Sheets IGBT Modules for Motor Drive & UPS IGBT Modules for Motor Drives in Industrial Electric Vehicles

IC 50061

Abstract: FA57SA50LC 50071 GA400TD25S FB180SA10 GA600GD25S CHOPPER GA200TD120U GA200SA60U GA200NS61U
Contextual Info: International Rectifier COLOR CODING: EXISTING Products The Switch Module Navigator NEW Products released to production in last 69 months UPCOMING Products to be released within next 3-4 months POTENTIAL Products no current plans. see bus.mgmt. Effective 22 July, 1998

IRF 3250

Abstract: IRf 334 irf 1402 irf 2117 cry 152 H22B1 EFG13C ec75 HFA16PB120 FA57SA50LC
Contextual Info: Semiconductor Directory ManufacturerÕs Code Log AGT ADI AMD AVX COL CRY Agilent Technologies Analog Devices Inc. Advanced Micro Devices AVX Collmer Semiconductors, Inc. Crydom Company Mfr.Õs Type Price DLS EPC FSC GIS IRF INT Mfr.Õs Code Page Dallas Semiconductor