G0D14 Search Results
G0D14 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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SENSYM
Abstract: ST2000 sensym differential pressure 163PC01D48 SENSYM st2000 Honeywell OR SenSym SENSYM ma board SENSYM 150 SENSYM* 19 163SC01D48
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163PC01D48 163SC01D48 120cmH2O -20to 120cm 20cmH 20cmH^ SENSYM ST2000 sensym differential pressure 163PC01D48 SENSYM st2000 Honeywell OR SenSym SENSYM ma board SENSYM 150 SENSYM* 19 | |
82C929
Abstract: opti 82c929 SF921 ns 4248 82C92 OPL2
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82C929 32C929 82C929 MPU-401, 16-bit Sound31 588SB opti 82c929 SF921 ns 4248 82C92 OPL2 | |
Contextual Info: T R I COMPUTING Q U AND I N T S E M I C O N D U C T O R , NETWORKING Figure 1. Block Diagram FBIN S1 I N C C LK SO NC NC GA1086 GND Features I • Operates from 30 MHz to 67 MHz ■ ■ Pin-to-pin output skew o f 2 5 0 ps max ■ Period-to-period jitter: 75 ps (typ) |
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GA1086 11-Output -350ps 500ps GA1086 | |
NN5116Contextual Info: NN511661 /NN511667series ED O Hyper Page Mode CM O S 64Kx 16bit Dynamic RAM NPN>a( D ESCRIPTIO N The NN511661/1667 se ries is a high performance CM OS Dynam ic Random A ccess Memory organized as 65,536 words by 16 bits. The NN511661/1667 series is fabricated with advanced CM OS technology and designed with innovative design |
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NN511661 /NN511667series 16bit NN511661/1667 QD01515 /A/571661 NN511667 NN5116 | |
Contextual Info: TP15L20 | NPN#—V > h > k '7 > 's X 3 i/ / NPN Darlington Transistor O u tlin e D im e n sio n s 5.5=0-3 15.0±0-3 Date code EIA J No. ¡ '2 2 " D 2196 B C E Mffii§l£& E q u iv a le n t C ir c u it w MAXTÎ7 V 3.3±0-3 2.51 ' oC 2.1 MAX 2.1M AX +i |
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TP15L20) 2SD2196 | |
Contextual Info: W83877F IVinbond Electronics Corp. WINBOND I/O GENERAL DESCRIPTION One of Winbond's popular series of I/O chips, the W83877F integrates a disk drive adapter, serial port UART , parallel port, IDE bus interface, and game port decoder onto a single chip. The |
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W83877F W83877F W83777F, an70066 S23S4 | |
bc352
Abstract: BC251 BC335
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BC225 BC237 BC238 BC239 BC250 BC251 BC252 BC253 BC256 BC257 bc352 BC335 | |
Contextual Info: •HYUNDAI HY524800 Series SEMICONDUCTOR 512KX 8-blt CMOS DRAM DESCRIPTION The HY524800 is the new generation and fast dynamic RAM organized 524,288 x 8-bits. The HY524800 utilizes Hyundai’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating |
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HY524800 512KX DD01410 561MAX. 1AC03-20-APR93 4b750Ã |