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    FSX017WF Search Results

    FSX017WF FFF Equivalents (1)

    The Form Fit Function (FFF) results will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts.

    Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

    Part Number Manufacturer Composite Price Description
    FSX017WF FUJITSU Limited Check for Price RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET

    FSX017WF Functional Equivalents (2)

    The Functional Equivalents tab will give you options that are likely to match the same function of FSX017WF, but it may not fit your design.

    Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

    Part Number Manufacturer Composite Price Description
    FSX017WF FUJITSU Semiconductor Limited Check for Price RF Small Signal Field-Effect Transistor
    FSX017WF SUMITOMO ELECTRIC Industries Ltd Check for Price RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET

    FSX017WF Datasheets (1)

    Fujitsu
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FSX017WF
    Fujitsu General Purpose GaAs FET Original PDF 92.72KB 4

    FSX017WF Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FSX017WF

    Contextual Info: FSX017WF General Purpose GaAs FET FEATURES • • • • Medium Power Output: P1dB=21.5dB Typ. @8.0GHz High Power Gain: G1dB=11dB (Typ.)@8.0GHz Hermetic Metal/Ceramic Package Proven Reliability DESCRIPTION The FSX017WF is a general purpose GaAs FET designed for medium


    Original
    FSX017WF FSX017WF 12GHz. FCSI0598M200 PDF

    Contextual Info: FSX017WF General Purpose GaAs FET FEATURES • • • • Medium Power Output: P1dB=21.5dB Typ. @8.0GHz High Power Gain: G1dB=11dB (Typ.)@8.0GHz Hermetic Metal/Ceramic Package Proven Reliability DESCRIPTION The FSX017WF is a general purpose GaAs FET designed for medium


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    FSX017WF FSX017WF 12GHz. PDF

    FSXO17WF

    Abstract: FSX017WF 12QHz fujitsu gaas fet
    Contextual Info: FSX017WF General Purpose GaAs FET FEATURES • • • • Medium Power Output: P-|<jB=21-5dB Typ. @8.0GHz High Power Gain: G-|dB=11dB (Typ.)@8.0GHz Hermetic Metal/Ceramic Package Proven Reliability DESCRIPTION The FSX017WF is a general purpose GaAs FET designed for medium


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    FSXO17WF FSX017WF 12GHz. FCSI0598M200 FSXO17WF 12QHz fujitsu gaas fet PDF

    FSX017WF

    Abstract: FSX017
    Contextual Info: FSX017WF General Purpose GaAs FET FEATURES • • • • Medium Power Output: P1dB=21.5dB Typ. @8.0GHz High Power Gain: G1dB=11dB (Typ.)@8.0GHz Hermetic Metal/Ceramic Package Proven Reliability DESCRIPTION The FSX017WF is a general purpose GaAs FET designed for medium


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    FSX017WF FSX017WF 12GHz. FSX017 PDF

    NF 817

    Abstract: Eudyna Devices FSX017WF Eudyna Devices power amplifiers
    Contextual Info: FSX017WF General Purpose GaAs FET FEATURES • • • • Medium Power Output: P1dB=21.5dB Typ. @8.0GHz High Power Gain: G1dB=11dB (Typ.)@8.0GHz Hermetic Metal/Ceramic Package Proven Reliability DESCRIPTION The FSX017WF is a general purpose GaAs FET designed for medium


    Original
    FSX017WF FSX017WF 12GHz. NF 817 Eudyna Devices Eudyna Devices power amplifiers PDF

    Contextual Info: FSX017WF General Purpose GaAs FET FEATURES • • • • Medium Power Output: P1dB=21.5dB Typ. @8.0GHz High Power Gain: G1dB=11dB (Typ.)@8.0GHz Hermetic Metal/Ceramic Package Proven Reliability DESCRIPTION The FSX017WF is a general purpose GaAs FET designed for medium


    Original
    FSX017WF FSX017WF 12GHz. FCSI0598M200 PDF

    FMC141401-02

    Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FSX52WF FUJITSU L101 fujitsu x51 FLL200-2 FLL300-1
    Contextual Info: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User must pay careful attention to the following precautions when taking


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    PDF

    FSX017WF

    Contextual Info: FSXOl 7WF General Purpose GaAs F E T s ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Symbol Condition Rating Unit Vd S 12 V Gate-Source Voltage vgs -5 V Total Power Dissipation Ptot 1.0 w -65 to +175 °c °c Tc = 25°C O) Channel Temperature


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    2000Q. FSX017WF PDF