FLR016XV Search Results

FLR016XV Datasheets (1)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
FLR016XV		Unknown	FET Data Book	Scan	PDF	98.96KB	2

FLR016XV Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: FLR016XP, FLR016XV m ïm :il GaAs F E T and H E M T Chips fU J Ilb U FEATURES • High Output Power: P-\|<jB = 20.0dBm Typ. • High Gain: G ^ b = 8.0dB(Typ.)(FLR016XP) G 1dB = 9.0dB(Typ.)(FLR016XV) • High PAE: = 25%(Typ.)(FLR016XP) il add = 26%(Typ.)(FLR016XV)	OCR Scan	flr016xp flr016xv	PDF
Flr016xp Abstract: FLR016XV GaAs FET HEMT Chips Contextual Info: FLR016XP, FLR016XV GaAs FET and HEMT Chips FEATURES • High Output Power: P1dB = 20.0dBm Typ. • High Gain: G1dB = 8.0dB(Typ.)(FLR016XP) NOT Drain G1dB = 9.0dB(Typ.)(FLR016XV) • High PAE: hadd = 25%(Typ.)(FLR016XP) REC OM Source hadd = 26%(Typ.)(FLR016XV)	Original	flr016xp flr016xv gaas fet hemt chips	PDF
et 1103 Abstract: Flr016xp Contextual Info: FLR016XP, F LR 016X V GaAs F ET a n d H E M T Chips ELECTRICAL CHARACTERISE CS Ambient Temperature Ta=25°C Item Symbol Saturated Drain Current Test Conditions ID SS - 60 90 mA - 30 - mS -1.0 -2.0 -3.5 V -4 - - V 19 20 - dBm 7.0 8.0 - dB - 25 - % 19 20 -	OCR Scan	flr016xp 18ghz flr016xv et 1103	PDF
FLC301XP Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171 Contextual Info: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips	OCR Scan	flc301xp flc301xp equivalent flk052xp fujitsu gaas fet application note +6iss1b1 cs98e1v6r800-k41d cs98e1v6r000-k41b fujitsu "application notes fjs-ds-158 fll171	PDF