FK37V Search Results

FK37V Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MGFK35V4045-01 Contextual Info: A m it s u b is h i M G FK37V XXXX Packaged ELECTRONIC DEVICE GROUP FEATURES The FK37VXXXX products are internally impedance matched devices for use in Ku-band power amplifier applications. • Internally matched to 50Q • High output power P-idB = 5.5W (TYP)	OCR Scan	FK37V MGFK37VXXXX MGFK35V4045-01 MGFK35V4045-51	PDF
GFK37V404S Abstract: K37V4045 Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M FK37V404S 1 4 . 0 - 14.5G H z BAND 5 W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The M G F K 3 7 V 4 0 4 5 is an internally impedance matched GaAs power FET especially designed for use in 14.0 ~ 14.5 GHz-band amplifiers. The hermetically sealed metal-ceramic	OCR Scan	GFK37V404S GFK37V404S K37V4045	PDF

Catalog Datasheet

Type

Document Tags

PDF

MGFK35V4045-01

Contextual Info: A m it s u b is h i M G FK37V XXXX Packaged ELECTRONIC DEVICE GROUP FEATURES The FK37VXXXX products are internally impedance matched devices for use in Ku-band power amplifier applications. • Internally matched to 50Q • High output power P-idB = 5.5W (TYP)

OCR Scan

FK37V MGFK37VXXXX MGFK35V4045-01 MGFK35V4045-51

PDF

GFK37V404S

Abstract: K37V4045
Contextual Info: MITSUBISHI SEMICONDUCTOR <GaAs FET> M FK37V404S 1 4 . 0 - 14.5G H z BAND 5 W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The M G F K 3 7 V 4 0 4 5 is an internally impedance matched GaAs power FET especially designed for use in 14.0 ~ 14.5 GHz-band amplifiers. The hermetically sealed metal-ceramic

OCR Scan

GFK37V404S GFK37V404S K37V4045

PDF