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    FDS89141 Search Results

    FDS89141 Datasheets (1)

    Fairchild Semiconductor
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FDS89141
    		Fairchild Semiconductor FETs - Arrays, Discrete Semiconductor Products, MOSFET N-CH 100V 3.5A 8SOIC Original PDF 6
    SF Impression Pixel

    FDS89141 Price and Stock

    onsemi

    onsemi FDS89141

    Transistor: N-MOSFET x2; unipolar; 100V; 3.5A; 31W; SO8
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    FDS89141 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: FDS89141 Dual N-Channel PowerTrench MOSFET 100 V, 3.5 A, 62 mΩ Features General Description ̈ Max rDS on = 62 mΩ at VGS = 10 V, ID = 3.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has ̈ Max rDS(on) = 100 mΩ at VGS = 6 V, ID = 2.8 A


    Original     		fds89141 PDF

    FDS89141

    Abstract: SO8 package fairchild
    Contextual Info: FDS89141 Dual N-Channel PowerTrench MOSFET 100 V, 3.5 A, 62 mΩ Features General Description „ Max rDS on = 62 mΩ at VGS = 10 V, ID = 3.5 A This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has „ Max rDS(on) = 100 mΩ at VGS = 6 V, ID = 2.8 A


    Original     		fds89141so8 package fairchild PDF

    wurth 744

    Abstract: ceragon AN5043 SMBJ58A SOT23 mark d23 FDS86141 MAX5900 wap sot23 MOSFET MARK y2 15VD40
    Contextual Info: Maxim > Design support > App notes > Basestations/Wireless Infrastructure > APP 5043 Maxim > Design support > App notes > Hot-Swap and Power Switching Circuits > APP 5043 Maxim > Design support > App notes > Power-Supply Circuits > APP 5043 Keywords: powered device, PD, Power over Ethernet, PoE, IEEE 802.3af, IEEE 802.3at, Class 2 PD, Class 3 PD, IP phones, IP


    Original     		com/an5043an5043app5043appnote5043+9wurth 744ceragonsmbj58asot23 mark d23fds86141max5900wap sot23mosfet mark y215vd40 PDF