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    FDPF680N10T Search Results

    FDPF680N10T Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FDPF680N10T
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 12A TO-220F Original PDF 8
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    onsemi FDPF680N10T

    MOSFET N-CH 100V 12A TO220F
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    Rochester Electronics LLC FDPF680N10T

    MOSFET N-CH 100V 12A TO220F
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    Fairchild Semiconductor Corporation FDPF680N10T

    Power Field-Effect Transistor, 12A, 100V, 0.068ohm, N-Channel, MOSFET, TO-220AB
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    Rochester Electronics FDPF680N10T 37,903 1
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    FDPF680N10T Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: FDPF680N10T N-Channel PowerTrench MOSFET 100 V, 12 A, 68 mΩ Features Description • RDS on = 54 mΩ ( Typ.)@ VGS = 10 V, ID = 6 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.


    Original     		FDPF680N10T O-220F PDF

    Contextual Info: FDPF680N10T N-Channel PowerTrench MOSFET 100V, 12A, 68mΩ Features Description • RDS on = 54mΩ ( Typ.)@ VGS = 10V, ID = 6A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		FDPF680N10T O-220F FDPF680N10T PDF

    FDPF680N10T

    Contextual Info: FDPF680N10T N-Channel PowerTrench MOSFET 100V, 12A, 68mΩ Features Description • RDS on = 54mΩ ( Typ.)@ VGS = 10V, ID = 6A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		FDPF680N10T O-220F FDPF680N10T PDF

    Contextual Info: FDPF680N10T N-Channel PowerTrench MOSFET 100 V, 12 A, 68 mΩ Features Description • RDS on = 54 mΩ ( Typ.)@ VGS = 10 V, ID = 6 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.


    Original     		FDPF680N10T O-220F PDF

    Contextual Info: FDPF680N10T N-Channel PowerTrench MOSFET 100 V, 12 A, 68 mΩ Features Description • RDS on = 54 mΩ (Typ.) @ VGS = 10 V, ID = 6 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.


    Original     		FDPF680N10T O-220F PDF