FDPF680N10T Search Results
FDPF680N10T Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| FDPF680N10T | Fairchild Semiconductor | FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 12A TO-220F | Original | 8 |
FDPF680N10T Price and Stock
onsemi FDPF680N10TTrans MOSFET N-CH 100V 12A 3-Pin(3+Tab) TO-220FP Tube |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDPF680N10T | 6,995 | 378 |
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FDPF680N10T | Tube | 2,000 |
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FDPF680N10T | 6,995 | 1 |
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FDPF680N10T | 17,535 |
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FAIRCHILD FDPF680N10TTrans MOSFET N-CH 100V 12A 3-Pin(3+Tab) TO-220F Rail |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDPF680N10T | 5,500 | 378 |
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| FDPF680N10T | 819 | 378 |
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| FDPF680N10T | 522 | 378 |
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Fairchild Semiconductor Corporation FDPF680N10TMOSFET N-Channel 100V 12A (Tc) TO-220-3 Tube |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDPF680N10T | 37,903 | 1 |
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FDPF680N10T Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: FDPF680N10T N-Channel PowerTrench MOSFET 100 V, 12 A, 68 mΩ Features Description • RDS on = 54 mΩ ( Typ.)@ VGS = 10 V, ID = 6 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. |
Original |
fdpf680n10to-220f | |
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Contextual Info: FDPF680N10T N-Channel PowerTrench MOSFET 100V, 12A, 68mΩ Features Description • RDS on = 54mΩ ( Typ.)@ VGS = 10V, ID = 6A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet |
Original |
fdpf680n10to-220f | |
FDPF680N10TContextual Info: FDPF680N10T N-Channel PowerTrench MOSFET 100V, 12A, 68mΩ Features Description • RDS on = 54mΩ ( Typ.)@ VGS = 10V, ID = 6A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet |
Original |
fdpf680n10to-220f | |
|
Contextual Info: FDPF680N10T N-Channel PowerTrench MOSFET 100 V, 12 A, 68 mΩ Features Description • RDS on = 54 mΩ ( Typ.)@ VGS = 10 V, ID = 6 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. |
Original |
fdpf680n10to-220f | |
|
Contextual Info: FDPF680N10T N-Channel PowerTrench MOSFET 100 V, 12 A, 68 mΩ Features Description • RDS on = 54 mΩ (Typ.) @ VGS = 10 V, ID = 6 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. |
Original |
fdpf680n10to-220f |