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    FDP5N60NZ Datasheets (1)

    Fairchild Semiconductor
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FDP5N60NZ
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 600V 4.5A TO-220-3 Original PDF 10
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    onsemi FDP5N60NZ

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    FDP5N60NZ Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: FDP5N60NZ / FDPF5N60NZ N-Channel UniFETTM II MOSFET 600 V, 4.5 A, 2.0 Ω Features Description • RDS on = 1.65 Ω (Typ.) @ VGS = 10 V, ID = 2.25 A UniFETTM II MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on advanced planar stripe and DMOS


    Original     		fdp5n60nzfdpf5n60nz PDF

    FDPF5N60NZ

    Contextual Info: FDP5N60NZ / FDPF5N60NZ N-Channel UniFETTM II MOSFET 600 V, 4.5 A, 2.0  Features Description • RDS on = 1.65  (Typ.) @ VGS = 10 V, ID = 2.25 A UniFETTM II MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on advanced planar stripe and


    Original     		fdp5n60nzfdpf5n60nz PDF

    FDPF*10N60NZ

    Abstract: FDPF10n60
    Contextual Info: UniFET-II TM FDP5N60NZ / FDPF5N60NZ N-Channel MOSFET 600V, 4.5A, 2.0 Features Description • RDS on = 1.65 ( Typ.)@ VGS = 10V, ID = 2.25A • Low Gate Charge ( Typ. 10nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		fdp5n60nzfdpf5n60nzfdpf*10n60nzfdpf10n60 PDF

    Contextual Info: UniFET-IITM FDP5N60NZ / FDPF5N60NZ N-Channel MOSFET 600V, 4.5A, 2.0Ω Features Description • RDS on = 1.65Ω ( Typ.)@ VGS = 10V, ID = 2.25A • Low Gate Charge ( Typ. 10nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		fdp5n60nzfdpf5n60nz PDF

    10-15-0C

    Abstract: mosfet 30s FDP5N60NZ FDPF5N60NZ
    Contextual Info: UniFET-IITM FDP5N60NZ / FDPF5N60NZ N-Channel MOSFET 600V, 4.5A, 2.0Ω Features Description • RDS on = 1.65Ω ( Typ.)@ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		fdp5n60nzfdpf5n60nz10-15-0cmosfet 30s PDF

    FDPF*10N60NZ

    Abstract: FDP10N60NZ FDPF10N60NZ switched mode power
    Contextual Info: UniFET-II TM FDP5N60NZ / FDPF5N60NZ N-Channel MOSFET 600V, 4.5A, 2.0 Features Description • RDS on = 1.65 ( Typ.)@ VGS = 10V, ID = 2.25A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		fdp5n60nzfdpf5n60nzfdpf*10n60nzfdp10n60nz+2fdpf10n60nzswitched mode power PDF