FDP054N10 Search Results
FDP054N10 Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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FDP054N10 |
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FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V TO-220AB-3 | Original | 8 |
FDP054N10 Price and Stock
onsemi FDP054N10MOSFET N-CH 100V 120A TO220-3 |
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Fairchild Semiconductor Corporation FDP054N10 |
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FDP054N10 | 392 | 2 |
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FDP054N10 | 313 |
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FDP054N10 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: FDP054N10 N-Channel PowerTrench MOSFET 100 V, 144 A, 5.5 mΩ Features Description • RDS on = 4.6 mΩ (Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining |
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FDP054N10 | |
Contextual Info: FDP054N10 N-Channel PowerTrench MOSFET 100V, 144A, 5.5mΩ Features Description • RDS on = 4.6mΩ ( Typ.)@ VGS = 10V, ID = 75A • Fast Switching Speed • Low Gate Charge This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been |
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FDP054N10 O-220 | |
FDP054N10Contextual Info: FDP054N10 N-Channel PowerTrench MOSFET 100 V, 144 A, 5.5 mΩ Features Description • RDS on = 4.6 mΩ ( Typ.)@ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while |
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FDP054N10 FDP054N10 | |
FDP054N10Contextual Info: FDP054N10 N-Channel PowerTrench MOSFET 100V, 144A, 5.5mΩ Features Description • RDS on = 4.6mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet |
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FDP054N10 O-220 FDP054N10 | |
FDP054N10
Abstract: MOSFET 100V
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FDP054N10 O-220 FDP054N10 MOSFET 100V | |
fdp054n10Contextual Info: FDP054N10 N-Channel PowerTrench MOSFET 100V, 144A, 5.5mΩ Features Description • RDS on = 4.6mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet |
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FDP054N10 FDP054N10 O-220 | |
MOSFET 100VContextual Info: FDP054N10 N-Channel PowerTrench MOSFET 100V, 144A, 5.5mW Features Description • RDS on = 4.6mW ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet |
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FDP054N10 FDP054N10 O-220 MOSFET 100V |