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    FDP036N10A Datasheets (1)

    Fairchild Semiconductor
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FDP036N10A
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V TO-220AB-3 Original PDF 9
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    onsemi FDP036N10A

    PT5 NCH 100V 3.6 MOHM
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    Fairchild Semiconductor Corporation FDP036N10A

    MOSFET N-Channel 100V 120A (Tc) TO-220-3 Tube
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    Rochester Electronics FDP036N10A 7 1
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    FDP036N10A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    FDP036N10A

    Abstract: fdp036n10 FDP036N0A 47w marking fdp036
    Contextual Info: FDP036N10A N-Channel PowerTrench MOSFET 100V, 176A, 3.6mW Features Description • RDS on = 3.2mW ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		FDP036N10A O-220AB FDP036N10A fdp036n10 FDP036N0A 47w marking fdp036 PDF

    fdp036n10a

    Contextual Info: FDP036N10A N-Channel PowerTrench MOSFET 100 V, 214 A, 3.6 mΩ Features Description • RDS on = 3.2 mΩ ( Typ.)@ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor®’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching


    Original     		FDP036N10A FDP036N10A PDF

    FDP036N0A

    Abstract: FDP036N10A
    Contextual Info: FDP036N10A N-Channel tm PowerTrench MOSFET 100V, 176A, 3.6mΩ Features Description • RDS on = 3.2mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		FDP036N10A O-220AB FDP036N0A FDP036N10A PDF

    Contextual Info: FDP036N10A N-Channel tm PowerTrench MOSFET 100V, 214A, 3.6mΩ Features Description • RDS on = 3.2mΩ ( Typ.)@ VGS = 10V, ID = 75A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		FDP036N10A FDP036N10A O-220AB PDF

    Contextual Info: FDP036N10A N-Channel tm PowerTrench MOSFET 100V, 214A, 3.6mΩ Features Description • RDS on = 3.2mΩ ( Typ.)@ VGS = 10V, ID = 75A • Fast Switching Speed • Low Gate Charge This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		FDP036N10A O-220AB PDF

    Contextual Info: FDP036N10A N-Channel PowerTrench MOSFET 100 V, 214 A, 3.6 mΩ Features Description • RDS on = 3.2 mΩ ( Typ.) @ VGS = 10 V, ID = 75 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior


    Original     		FDP036N10A PDF