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    FDP027N08B Search Results

    FDP027N08B Datasheets (3)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FDP027N08B
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 80V 223A TO-220-3 Original PDF 9
    FDP027N08B_F102
    		Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 80V 120A TO-220-3 Original PDF 9
    FDP027N08B-F102
    		ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 80V 120A TO-220-3 Original PDF 778.74KB
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    FDP027N08B Price and Stock

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    onsemi FDP027N08B-F102

    MOSFET N-CH 80V 120A TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FDP027N08B-F102 Tube 413 1
    • 1 $3.25
    • 10 $3.25
    • 100 $1.80
    • 1000 $1.50
    • 10000 $1.46
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    Avnet Americas () FDP027N08B-F102 Tube 569
    • 1 -
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    • 1000 $1.42
    • 10000 $1.40
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    FDP027N08B-F102 Tube 34 Weeks 800
    • 1 -
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    • 100 -
    • 1000 $1.67
    • 10000 $1.46
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    Mouser Electronics FDP027N08B-F102 949
    • 1 $3.19
    • 10 $1.82
    • 100 $1.76
    • 1000 $1.46
    • 10000 $1.46
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    Verical () FDP027N08B-F102 80,600 206
    • 1 -
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    • 100 -
    • 1000 $1.64
    • 10000 $1.54
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    FDP027N08B-F102 1,600 206
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    • 1000 $1.64
    • 10000 $1.54
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    Newark FDP027N08B-F102 Bulk 78 1
    • 1 $3.74
    • 10 $2.37
    • 100 $2.31
    • 1000 $2.16
    • 10000 $2.16
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    Onlinecomponents.com FDP027N08B-F102
    • 1 -
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    • 1000 $1.61
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    Rochester Electronics FDP027N08B-F102 82,200 1
    • 1 -
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    • 100 $1.46
    • 1000 $1.31
    • 10000 $1.23
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    TME FDP027N08B-F102 1
    • 1 $3.47
    • 10 $3.12
    • 100 $2.73
    • 1000 $2.32
    • 10000 $2.32
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    Richardson RFPD FDP027N08B-F102 800
    • 1 -
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    • 1000 $1.46
    • 10000 $1.46
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    Avnet Asia FDP027N08B-F102 34 Weeks 800
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    Avnet Silica FDP027N08B-F102 35 Weeks 50
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    EBV Elektronik FDP027N08B-F102 36 Weeks 50
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    Flip Electronics FDP027N08B-F102 1,382
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    IBS Electronics FDP027N08B-F102 800
    • 1 -
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    • 1000 $2.41
    • 10000 $2.35
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    Win Source Electronics FDP027N08B-F102 30,000
    • 1 -
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    • 100 $2.73
    • 1000 $2.45
    • 10000 $2.45
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    onsemi FDP027N08B

    MOSFET N-CH 80V 120A TO220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FDP027N08B Tube 50
    • 1 -
    • 10 -
    • 100 $2.96
    • 1000 $2.96
    • 10000 $2.96
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    FLIP ELECTRONICS FDP027N08B-F102

    MOSFET N-CH 80V 120A TO-220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FDP027N08B-F102 Tube 400
    • 1 -
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    • 1000 $1.58
    • 10000 $1.58
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    Fairchild Semiconductor Corporation FDP027N08B-F102

    FDP027N08B-F102 by Fairchild is a N-channel MOSFET with 80V max drain-source voltage, 120A continuous drain current, 2.7mΩ on-resistance, and operates in a TO-220 package, ideal for power management applications.
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    IBS Electronics FDP027N08B-F102 800
    • 1 -
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    • 100 -
    • 1000 $2.41
    • 10000 $2.35
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    FDP027N08B Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: FDP027N08B N-Channel PowerTrench MOSFET 80 V, 223 A, 2.7 mΩ Features Description • RDS on = 2.21 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior


    Original     		FDP027N08B PDF

    FDP027N08

    Abstract: FDP027N08B 200A battery charger
    Contextual Info: FDP027N08B_F102 N-Channel PowerTrench MOSFET 80V, 223A, 2.7mΩ Features Description • RDS on = 2.21mΩ ( Typ.) @ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been especially tailored to minimize the on-state resistance and yet


    Original     		PDF

    Diode Marking C3

    Abstract: FDP027N08B_F102
    Contextual Info: FDP027N08B_F102 N-Channel PowerTrench MOSFET 80 V, 223 A, 2.7 mΩ Features Description • RDS on = 2.21 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A This N-Channel MOSFET is produced using Fairchild ® ® Semiconductor ’s advanced PowerTrench process that has


    Original     		PDF