FDMS86263P Search Results
FDMS86263P Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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FDMS86263P |
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FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 150V 22A POWER 56 | Original | 7 |
FDMS86263P Price and Stock
onsemi
onsemi FDMS86263PMOSFET P-CH 150V 4.4A/22A 8PQFN |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDMS86263P | Cut Tape | 36,254 | 1 |
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FDMS86263P | Reel | 3,000 | 18 Weeks | 3,000 |
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FDMS86263P | 845 |
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FDMS86263P | 45,000 | 3,000 |
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FDMS86263P | 45,000 | 18 Weeks | 3,000 |
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FDMS86263P | Reel | 3,000 |
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FDMS86263P | Reel | 34 Weeks | 3,000 |
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FDMS86263P |
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FDMS86263P | 1 |
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FDMS86263P | 3,003 |
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FDMS86263P | 3,000 |
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FDMS86263P | 3,900 |
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FDMS86263P | 18 Weeks | 3,000 |
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FDMS86263P | 19 Weeks | 3,000 |
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FDMS86263P | Cut Tape | 3,000 | 0 Weeks, 1 Days | 1 |
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FDMS86263P | 39,500 |
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FDMS86263P | 20 Weeks | 3,000 |
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FDMS86263P | 3,000 |
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FDMS86263P | 7,747 |
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FDMS86263P | 36,000 |
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onsemi FDMS86263P-23507XTransistor MOSFET P-Channel 150V 22A 8-Pin Power 56 T/R - Tape and Reel (Alt: FDMS86263P-23507X) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDMS86263P-23507X | Reel | 47 Weeks | 3,000 |
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FDMS86263P-23507X | Bulk | 3,000 |
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onsemi FDMS86263P (POWERTRENCH)Mosfet, P-Ch, -150V, -22A, Power 56-8; Transistor Polarity:P Channel; Continuous Drain Current Id:-22A; Drain Source Voltage Vds:-150V; On Resistance Rds(On):0.042Ohm; Rds(On) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-2.9V; Powerrohs Compliant: Yes |Onsemi FDMS86263P |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDMS86263P (POWERTRENCH) | Cut Tape | 3,251 | 1 |
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FDMS86263P Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: FDMS86263P P-Channel PowerTrench MOSFET -150 V, -22 A, 53 mΩ Features General Description Max rDS on = 53 mΩ at VGS = -10 V, ID = -4.4 A Max rDS(on) = 64 mΩ at VGS = -6 V, ID = -4 A Very low Rds-on in Mid-Voltage P-Channel silicon technology |
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FDMS86263P | |
Contextual Info: FDMS86263P P-Channel PowerTrench MOSFET -150 V, -22 A, 53 mΩ Features General Description Max rDS on = 53 mΩ at VGS = -10 V, ID = -4.4 A Max rDS(on) = 64 mΩ at VGS = -6 V, ID = -4 A Very low Rds-on in Mid-Voltage P-Channel silicon technology |
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FDMS86263P |