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    FDMS8622 Search Results

    FDMS8622 Datasheets (1)

    Fairchild Semiconductor
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FDMS8622
    Fairchild Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 100V 4.8A 8-PQFN Original PDF 7
    SF Impression Pixel

    FDMS8622 Price and Stock

    onsemi

    onsemi FDMS8622

    MOSFET N-CH 100V 4.8A/16.5A 8QFN
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () FDMS8622 Digi-Reel 1,115 1
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    FDMS8622 Cut Tape 1,115 1
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    • 10 $0.89
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    FDMS8622 Tape & Reel 545 3,000
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    Avnet Americas FDMS8622 Tape & Reel 22 Weeks 3,000
    • 1 -
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    Mouser Electronics FDMS8622 10,264
    • 1 $1.42
    • 10 $0.89
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    Newark FDMS8622 Cut Tape 3,175 1
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    Onlinecomponents.com FDMS8622
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    Rochester Electronics FDMS8622 177 1
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    TME FDMS8622 1
    • 1 $1.33
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    Avnet Silica FDMS8622 3,000 23 Weeks 3,000
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    Chip One Stop FDMS8622 Cut Tape 2,780 0 Weeks, 1 Days 1
    • 1 $1.47
    • 10 $1.47
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    EBV Elektronik FDMS8622 24 Weeks 3,000
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    onsemi FDMS8622-NC

    FET 100V 56.0 MOHM PQFN56
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () FDMS8622-NC Tape & Reel 3,000
    • 1 -
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    • 10000 $0.36
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    FDMS8622-NC Cut Tape 1
    • 1 $0.80
    • 10 $0.57
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    FDMS8622-NC Digi-Reel 1
    • 1 $0.80
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    Avnet Americas FDMS8622-NC Tape & Reel 52 Weeks 3,000
    • 1 -
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    Mouser Electronics FDMS8622-NC
    • 1 $1.27
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    Newark FDMS8622-NC Cut Tape 1
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    Onlinecomponents.com FDMS8622-NC
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    FDMS8622 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    POWER56

    Abstract: Poe protection
    Contextual Info: FDMS8622 N-Channel Power Trench MOSFET 100 V, 16.5 A, 56 mΩ Features General Description „ Max rDS on = 56 mΩ at VGS = 10 V, ID = 4.8 A „ High performance trench technology for extremely low rDS(on) This N-Channel MOSFET is produced using Fairchild


    Original
    FDMS8622 FDMS8622 POWER56 Poe protection PDF

    Contextual Info: FDMS8622 N-Channel Power Trench MOSFET 100 V, 16.5 A, 56 mΩ Features General Description ̈ Max rDS on = 56 mΩ at VGS = 10 V, ID = 4.8 A ̈ High performance trench technology for extremely low rDS(on) This N-Channel MOSFET is produced using Fairchild


    Original
    FDMS8622 PDF