FDMS86163P Search Results
FDMS86163P Datasheets (1)
ON Semiconductor
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| FDMS86163P |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET P-CH 100V 7.9A POWER56 | Original | 545.2KB |
FDMS86163P Price and Stock
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onsemi FDMS86163PMOSFET P-CH 100V 7.9A/50A 8PQFN |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDMS86163P | Digi-Reel | 5,394 | 1 |
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| FDMS86163P | Cut Tape | 5,394 | 1 |
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| FDMS86163P | Tape & Reel | 3,000 | 3,000 |
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FDMS86163P | Tape & Reel | 21,000 | 43 Weeks | 3,000 |
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FDMS86163P | 59,730 |
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FDMS86163P | 471 | 235 |
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| FDMS86163P | 100 | 50 |
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FDMS86163P | Cut Tape | 3,818 | 5 |
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| FDMS86163P | Tape & Reel | 3,000 |
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FDMS86163P | Reel | 34 Weeks | 3,000 |
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| FDMS86163P | Reel | 43 Weeks | 3,000 |
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FDMS86163P | 100 |
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FDMS86163P | 471 | 1 |
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FDMS86163P | 2,848 | 1 |
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FDMS86163P | 43 Weeks | 3,000 |
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FDMS86163P | 44 Weeks | 3,000 |
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FDMS86163P | 45 Weeks | 3,000 |
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FDMS86163P | 3,062 |
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FDMS86163P | 13 | 1 |
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FDMS86163P | 100 |
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FLIP ELECTRONICS FDMS86163PMOSFET P-CH 100V 7.9A/50A 8PQFN |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDMS86163P | Tape & Reel |
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Buy Now | |||||||
onsemi FDMS86163P-23507XTransistor MOSFET P-Channel 100V 50A 8-Pin PQFN T/R - Tape and Reel (Alt: FDMS86163P-23507X) |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDMS86163P-23507X | Tape & Reel | 45 Weeks | 3,000 |
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Fairchild Semiconductor Corporation FDMS86163PTrans MOSFET P-CH 100V 7.9A 8-Pin PQFN EP T/R |
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| Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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FDMS86163P | 38 |
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FDMS86163P | 30,000 |
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FDMS86163P Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
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Contextual Info: FDMS86163P P-Channel PowerTrench MOSFET -100 V, -50 A, 22 mΩ Features General Description Max rDS on = 22 mΩ at VGS = -10 V, ID = -7.9 A Max rDS(on) = 30 mΩ at VGS = -6 V, ID = -5.9 A This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that has |
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FDMS86163P |