FDA59N25 Search Results

FDA59N25 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
FDA59N25		Fairchild Semiconductor	250V N-Channel MOSFET	Original	PDF	590.34KB	8

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onsemi FDA59N25 MOSFET N-CH 250V 59A TO3PN
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DigiKey	FDA59N25	Tube	389		1	1 $4.20 10 $4.20 100 $1.99 1000 $1.79 10000 $1.70	Buy Now
Avnet Americas	FDA59N25	Tube	230	8 Weeks	30	1 - 10 - 100 $1.79 1000 $1.66 10000 $1.66	Buy Now
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Future Electronics	FDA59N25	Tube		8 Weeks	450	1 - 10 - 100 - 1000 $1.93 10000 $1.90	Buy Now
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TME	FDA59N25				1	1 $3.81 10 $2.44 100 $2.44 1000 $2.44 10000 $2.44	Get Quote
Richardson RFPD	FDA59N25				450	1 - 10 - 100 - 1000 $1.66 10000 $1.66	Buy Now
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IBS Electronics	FDA59N25				450	1 - 10 - 100 - 1000 $2.23 10000 $2.18	Buy Now

FDA59N25 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: FDA59N25 N-Channel UniFETTM MOSFET 250 V, 59 A, 49 mΩ Features Description • RDS on = 49 mΩ (Max.) @ VGS = 10 V, ID = 29.5 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to	Original	FDA59N25	PDF
Contextual Info: FDA59N25 N-Channel UniFETTM MOSFET 250 V, 59 A, 49 mΩ Features Description • RDS on = 49 mΩ (Max.) @ VGS = 10 V, ID = 29.5 A UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to	Original	FDA59N25	PDF
FDA59N25 Abstract: mosfet equivalent fda 59 n 30 mosfet fda 59 n 30 Contextual Info: UniFET FDA59N25 TM VDS = 250V VDS Avalanche = 300V RDS(on) Typ. @10V = 41mΩ 250V N-Channel MOSFET Features Description • 59A, 250V, RDS(on) = 0.049Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,	Original	FDA59N25 FDA59N25 mosfet equivalent fda 59 n 30 mosfet fda 59 n 30	PDF
FDA59N25 Abstract: n-channel 250V power mosfet Contextual Info: UniFET FDA59N25 TM VDS = 250V VDS Avalanche = 300V RDS(on) Typ. @10V = 41mΩ 250V N-Channel MOSFET Features Description • 59A, 250V, RDS(on) = 0.049Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,	Original	FDA59N25 FDA59N25 n-channel 250V power mosfet	PDF
fda59n25 Contextual Info: FDA59N25 N-Channel UniFETTM MOSFET 250 V, 59 A, 49 mΩ Features Description • RDS on = 49 mΩ (Max.) @ VGS = 10 V, ID = 29.5 A • Low Gate Charge (Typ. 63 nC) • Low Crss (Typ. 70 pF) UniFETTM MOSFET is Fairchild Semiconductor ’s high voltage MOSFET family based on planar stripe and DMOS technology.	Original	FDA59N25 FDA59N25	PDF
irfb4115 Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .	Original	element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor	PDF
FQPF8N60C equivalent Abstract: FQPF9N50C equivalent LCD inverter circuit FAN7530 equivalent FAN7601 200w dc to ac inverter Circuit diagram FAN7529 equivalent FAN7601 equivalent FDD6685 equivalent FQPF10N60C equivalent Contextual Info: Introduction Fairchild offers a wide range of digital display solutions that increase power efficiency and decrease standby power— helping to meet the ever-increasing worldwide demand for energy conservation. Our products can help you meet the most stringent energy regulations including EnergyStar, 80 Plus and other standards specified by organizations such as	Original		PDF