FCH47N60 Search Results

Contextual Info: SupreMOS TM FCH47N60N N-Channel MOSFET 600V, 47A, 62mΩ Features Description o • 650V @TJ = 150 C The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based

Contextual Info: FCH47N60N N-Channel SupreMOS MOSFET 600 V, 47 A, 62 m Features Description o The SupreMOS® MOSFET is Fairchild Semiconductor®’s next generation of high voltage super-junction SJ technology employing a deep trench filling process that differentiates it from

Contextual Info: FCH47N60 N-Channel SuperFET MOSFET 600 V, 47 A, 70 m Features Description • 650 V atTJ = 150°C The FCH47N60 SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high-voltage super-junction SJ MOSFET family that utilizes charge-balance technology for outstanding

MARKING CODE F133

Abstract: FCH47N60F F133 FCH47N60F-F133 F133 SOT23-5 marking codes fairchild FCH47N60F_F133 F133 MARKING CODE TO-247-AB TO247AB
Contextual Info: SuperFET TM FCH47N60F _F133 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and

FCH47N60F

Contextual Info: SuperFET TM FCH47N60F 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and

N mosfet 100v 200A

Abstract: N-Channel 600V MOSFET p channel mosfet 100v FCA47N60 FCH47N60
Contextual Info: SuperFET TM FCH47N60 / FCA47N60 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and

4600 dual mosfet

Abstract: FCH47N60NF
Contextual Info: SupreMOS FCH47N60NF TM tm N-Channel MOSFET, FRFET 600V, 47A, 65mΩ Features Description • RDS on = 57.5mΩ (Typ.) @ VGS = 10V, ID = 23.5A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling

MOSFET 1 KW

Contextual Info: SupreMOSTM FCH47N60NF N-Channel MOSFET, FRFET 600V, 47A, 65mΩ Features Description • RDS on = 57.5mΩ (Typ.) @ VGS = 10V, ID = 23.5A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling

FCH47N60_F133

Abstract: FCH47N60-F133 mosfet 600v N-Channel 600V MOSFET F109 F133 FCA47N60 FCH47N60 FCA47N60F
Contextual Info: TM SuperFET FCH47N60_F133 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and

TO-247AB

Abstract: F133 FCH47N60 FCH47N60_F133
Contextual Info: SuperFET TM FCH47N60_F133 Features Description • 650V @TJ = 150°C SuperFETTM is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

mosfet 600V 100A ST

Contextual Info: SuperFET FCH47N60_F133 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFET® is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an ad vanced charge balance mechanism for outstanding low on- resistance and

Contextual Info: FCH47N60_F133 N-Channel SuperFET MOSFET 600 V, 47 A, 70 mΩ Features Description • 650V @TJ = 150°C SuperFET® MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction SJ MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching

Contextual Info: FCH47N60_F085 N-Channel MOSFET 600V, 47A, 79mΩ D Features „ Typ rDS on = 64mΩ at VGS = 10V, ID = 47A „ Typ Qg(tot) = 190nC at VGS = 10V, ID = 47A G „ UIS Capability „ RoHS Compliant „ Qualified to AEC Q101 TO-247 G D S Description SuperFETTM is Fairchild’s proprietary new generation of high

Contextual Info: TM SuperFET FCH47N60_F133 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and

Contextual Info: FCH47N60F_F085 N-Channel MOSFET 600V, 47A, 75mΩ D Features „ Typ rDS on = 66mΩ at VGS = 10V, ID = 47A „ Typ Qg(tot) = 190nC at VGS = 10V, ID = 47A G „ UIS Capability „ RoHS Compliant „ Qualified to AEC Q101 TO-247 G D S Description SuperFETTM is Fairchild’s proprietary new generation of high

F109

Abstract: FCA47N60 FCH47N60
Contextual Info: SuperFET FCH47N60 / FCA47N60 Features Description • 650V @TJ = 150°C SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

FCH47N60F

Abstract: FCH47N60
Contextual Info: TM SuperFET FCH47N60F 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and

Contextual Info: SupreMOS TM FCH47N60N N-Channel MOSFET 600V, 47A, 62mΩ Features Description o • 650V @TJ = 150 C The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based

Contextual Info: FCH47N60NF N-Channel SupreMOS FRFET® MOSFET 600 V, 45.8 A, 65 m Features Description • 650 V @TJ = 150 The SupreMOS® MOSFET is Fairchild Semiconductor®’s nextgeneration of high voltage super-junction SJ technology employing a deep trench filling process that differentiate it from

Contextual Info: FCH47N60N N-Channel SupreMOS MOSFET 600 V, 47 A, 62 mΩ Features Description o The SupreMOS® MOSFET is Fairchild Semiconductor’s next generation of high voltage super-junction SJ technology employing a deep trench filling process that differentiates it from

FCH47N60-F133

Contextual Info: SuperFET TM FCH47N60_F133 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and

FCH47N60

Abstract: FCA47N60 N mosfet 100v 200A F109 FCA47N60-F109
Contextual Info: SuperFET TM FCH47N60 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Fairchild's proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and

SERDES

Abstract: fch47n60n 511 MOSFET
Contextual Info: FCH47N60N N-Channel SupreMOS MOSFET 600 V, 47 A, 62 mΩ Features Description o The SupreMOS® MOSFET is Fairchild Semiconductor®’s next generation of high voltage super-junction SJ technology employing a deep trench filling process that differentiates it from

fch47n60nf

Contextual Info: FCH47N60NF N-Channel SupreMOS FRFET® MOSFET 600 V, 45.8 A, 65 mΩ Features Description • 650 V @TJ = 150 The SupreMOS® MOSFET is Fairchild Semiconductor®’s nextgeneration of high voltage super-junction SJ technology employing a deep trench filling process that differentiate it from