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    FAP450 Search Results

    FAP450 FFF Equivalents (1)

    The Form Fit Function (FFF) results will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts.

    Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

    Part Number Manufacturer Composite Price Description
    IRFP451 STMicroelectronics Check for Price Power Field-Effect Transistor, 14A I(D), 450V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218

    FAP450 Functional Equivalents (5)

    The Functional Equivalents tab will give you options that are likely to match the same function of FAP450, but it may not fit your design.

    Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

    Part Number Manufacturer Composite Price Description
    IRFP451 Samsung Semiconductor Check for Price Power Field-Effect Transistor, 13A I(D), 450V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    IRFP451 International Rectifier Check for Price Power Field-Effect Transistor, 14A I(D), 450V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
    2SK1015-01 Fuji Electric Co Ltd Check for Price Power Field-Effect Transistor, 18A I(D), 450V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
    IRFP354PBF International Rectifier Check for Price Power Field-Effect Transistor, 14A I(D), 450V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
    FAP-450 Fuji Electric Co Ltd Check for Price Power Field-Effect Transistor, 14A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN

    FAP450 Datasheets (3)

    Select Manufacturer
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FAP-450
    		Fuji Electric N-channel MOSFET Original PDF 222.35KB 3
    FAP-450
    		High Voltage Power Systems N-channel MOS-FET Original PDF 223.83KB 3
    FAP-450
    		Fuji Electric N-channel MOS-FET Scan PDF 248.9KB 3

    FAP450 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2sk2645

    Abstract: 2SK2648 2SK2655 2SK2759-01R TO-3PF 2SK2761 2SK2761-01MR 2SK2769-01MR 2SK2638-01MR 2SK2639-01
    Contextual Info: <s MOSFETs FAP-IIS Series - VGS ± 30V, Reduced Turn-Off Time, Improved High Temp Avalanche Ruggedness 450 - 900 Volts Device Type 2SK2638-01M R 2SK2754-01L,S 2SK2639-01 2SK2756-01R 2SK2755-01 2SK2640-01M R 2SK27S7-01 2SK27S8-01L.S 2SK2641-01 FAP450 2SK2759-01R


    OCR Scan     		2SK2638-01MR 2SK2754-01L 2SK2639-01 2SK2756-01R 2SK2755-01 2SK2640-01MR 2SK27S7-01 O-220 2SK27S8-01L 2SK2641-01 2sk2645 2SK2648 2SK2655 2SK2759-01R TO-3PF 2SK2761 2SK2761-01MR 2SK2769-01MR PDF

    Contextual Info: MOSFETs FAP-IIS Series - VGS ± 30V, Reduced Turn-Off Time, Improved High Temp Avalanche Ruggedness 450 •900 Volts Device Type 2SK2638-01MR 2SK2754-01L,S 2SK2639-01 2SK2756-01R 2SK2755-01 2SK2640-01MR 2SK27S7-01 2SK2758-01L.S 2SK2641-01 FAP450 2SK2759-01R


    OCR Scan     		2SK2638-01MR 2SK2754-01L 2SK2639-01 2SK2756-01R 2SK2755-01 2SK2640-01MR 2SK27S7-01 2SK2758-01L 2SK2641-01 FAP450 PDF

    Contextual Info: FAP450 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V) I(D) Max. (A)14 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)180# Minimum Operating Temp (øC)


    Original     		FAP450 PDF

    2SK100

    Abstract: 2SK2765 2SK2029-01LS 2sk1936 2SK1940 2sk2761 2SK196 2SK2082 2SK1082 2SK182
    Contextual Info: MOSFET QUICK REFERENCE GUIDE -30V to 450V BY PACKAGE TYPE F-l: P A G E 11 FA P-IIA : FA P-I: P A G E 11 FA P-IIS : F-ll: P A G E 11 F-lll: FA P-II: P A G E 12 SU R FA C E MOUNT FA P-III: P A G E 15 FA P-IIIA A U TO : P A G E 16 FA P-IIIB : P A G E 16 F-V:


    OCR Scan     		T0-220 T0-220F15 2SJ472-01L 2SJ314-01L 2SJ473-01L 2SK2248-01L 2SK1942-01 2SK2770-01 2SK2528-01 2SK1944-01 2SK100 2SK2765 2SK2029-01LS 2sk1936 2SK1940 2sk2761 2SK196 2SK2082 2SK1082 2SK182 PDF

    Contextual Info: FAP-450 N-channel MOS-FET FAP-IIS Series 500V > Features - 0,38Ω 14A 190W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - Switching Regulators


    Original     		FAP-450 to733-1700 PDF

    FAP-450

    Contextual Info: FAP-450 N-channel MOS-FET FAP-IIS Series 500V > Features - 0,38Ω 14A 190W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - Switching Regulators


    Original     		FAP-450 to733-1700 FAP-450 PDF

    Contextual Info: <s MOSFETs FAP-II Series V G S ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 250 - 900 Volts Device Type 2 S K 1 006-01M 2 S K 1 007-01 2 SK 1 009-01 2 S K 1 386-01 2 S K 1 0 1 1-01 2SK1101-01M 2SK1013-01 2SK1015-01 2SK1916-01 2SK1017-01 2 SK 1 008-01


    OCR Scan     		2SK1006-01M 2SK1007-01 2SK1009-01 2SK1386-01 2SK1011-01 2SK1101-01M 2SK1013-01 2SK1015-01 2SK1916-01 2SK1017-01 PDF

    2SK2652

    Abstract: 2SK2771-01R
    Contextual Info: MOSFET QUICK REFERENCE GUIDE -30V to 300V BY PACKAGE TYPE F-l: Page 30 FAP-IIA: Page 32 FAP-IIIA: Page 34 FAP-I: Page 30 FAP-IIS: Page 33 FAP-IIIB: Page 35 F-ll: Page 30 F-lll: Page 34 FAP-IIIBH: Page 35 FAP-II: Page 31 FAP-III: Page 34 F-V: Page 35 SURFACE MOUNT


    OCR Scan     		F8006N F7007N 2SJ472-01L T0-220 2SJ314-01L 2SJ473-01L 2SJ474-01L 2SJ476-01L 2SK2760-01R 2SK2148-01R 2SK2652 2SK2771-01R PDF

    IRF 3250

    Abstract: IRf 334 irf 1402 irf 2117 cry 152 H22B1 EFG13C ec75 HFA16PB120 FA57SA50LC
    Contextual Info: Semiconductor Directory ManufacturerÕs Code Log AGT ADI AMD AVX COL CRY Agilent Technologies Analog Devices Inc. Advanced Micro Devices AVX Collmer Semiconductors, Inc. Crydom Company Mfr.Õs Type Price DLS EPC FSC GIS IRF INT Mfr.Õs Code Page Dallas Semiconductor


    Original     		EC350 G2-1B02-TT H23LTI HCTL-2016 220N60C3D G2-1A05-TT H21A1 HCPL-4506 HGTG30N60C3 G2-1A06-ST IRF 3250 IRf 334 irf 1402 irf 2117 cry 152 H22B1 EFG13C ec75 HFA16PB120 FA57SA50LC PDF

    2SK1101-01M

    Abstract: 2SK1006-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1013-01 2SK1015-01 2SK1386-01
    Contextual Info: MOSFETs FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 250 - 900 Volts Device Type 2SK1006-01M 2SK1007-01 2SK1009-01 2SK1386-01 2SK1011-01 2SK1101-01M 2SK1013-01 2SK1015-01 2SK1916-01 2SK1017-01 2SK1008-01 2SK1010-01 2SK1820-01


    OCR Scan     		2SK1006-01M T0220F15 2SK1007-01 T0220 2SK1009-01 2SK1386-01 2SK1011-01 2SK1101-01M 2SK1013-01 2SK1015-01 PDF

    2SK1014-01

    Abstract: 2SK151
    Contextual Info: MOSFETs FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 250 - 900 Volts Device Type 2SK1006-01M 2SK1007-01 2SK1009-01 2SK1386-01 2SK1011-01 2SK1101-01M 2SK1013-01 2SK1015-01 2SK1916-01 2SK1017-01 2SK1008-01 2SK1010-01 2SK1820-01


    OCR Scan     		2SK1006-01M 2SK1007-01 2SK1009-01 2SK1386-01 2SK1011-01 2SK1101-01M 2SK1013-01 2SK1015-01 2SK1916-01 2SK1017-01 2SK1014-01 2SK151 PDF

    FAP-450

    Abstract: diode sy 170/20
    Contextual Info: FUJI FAP-450 N-channel MOS-FET 500V 0,38i2 1 4 A 1 9 0 W FAP-IIS Series > Features - > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V Gs = ± 30V Guarantee Repetitive Avalanche Rated TO-3P 4.5


    OCR Scan     		FAP-450 00Gb3b2 FAP-450 RG-50 diode sy 170/20 PDF

    Contextual Info: FUJI STUKmrDsoe • F-l SERIES - L o w • FAP-I SERIES - Low R d S ON . High Avalanche Ruggedness • F-ll SERIES - Vgs ± 30V, Reduced Turn-Off Time • FAP-II SERIES - V gs ± 30V, Reduced Turn-Off Time, High Avalanche Ruggedness • FAP-IIA Series - V gs ± 30V, Reduced Turn-Off Time,


    OCR Scan     		2SK2770-01 2SK2272-01R 2SK2528-01 2SK1212-01R 2SK1944-01 2SK2653-01R 2SK727-01 2SK1217-01R 2SK1082-01 2SK2655-01R PDF

    ROA 500V

    Abstract: tda 2200 FAP-450
    Contextual Info: FU JI e iu M s u 'iJ t ìU K FAP-450 N-channel MOS-FET FAP-IIS Series 500V 14A High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGs = ± 30V Guarantee Repetitive Avalanche Rated TO-3P 4.5 iE > Applications - Switching Regulators


    OCR Scan     		FAP-450 ROA 500V tda 2200 PDF

    FAP-450

    Contextual Info: FAP-450 N-channel MOS-FET FAP-IIS Series 500V > Features - 0,38Ω 14A 190W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage VGS = ± 30V Guarantee Repetitive Avalanche Rated > Applications - Switching Regulators


    Original     		FAP-450 FAP-450 PDF

    2SK2642-01MR

    Abstract: 2SK2652 2SK2876-01MR
    Contextual Info: MOSFETs FAP-IIS Series - VGS ± 30V, Reduced Turn-Off Time, Improved High Temp Avalanche Ruggedness 450 - 900 Volts Device Type 2SK2872-01MR 2SK2870-01L.S Maximum Ratinas I d A Pd (W) Voss (V) 450 8 30 450 8 50 8 450 50 Cha •acteristics (IVax.) Package


    OCR Scan     		2SK2872-01MR 2SK2870-01L 2SK2871-01 2SK2873-01 2SK2638-01 2SK2754-01L 2SK2639-01 2SK2756-01R 2SK2755-01 2SK2876-01MR 2SK2642-01MR 2SK2652 PDF