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    BF966S

    Abstract: UHF Dual Gate
    Contextual Info: B F966S _ SILICON N-CHANNEL DUAL GATE M OS-FET Depletion type field-effect transistor in a plastic X-package with source and substrate interconnected, intended fo r u .h .f. applications in television tuners and professional communication equipment.


    OCR Scan     		bf966suhf dual gate PDF

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Contextual Info: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


    OCR Scan     		lcd01bgy41bfw10 fet transistorcqy58+7germaniumrx101equivalent components fet bfw10bd643bf199283 to92 600a transistorzener phc PDF