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F2-01
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Weinschel
|
Fixed Coaxial Attenuator |
Original |
PDF
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129.52KB |
1 |
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F20-1000
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Triad Magnetics
|
Transformers - Power Transformers - XFRMR LAMINATED THRU HOLE |
Original |
PDF
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67.08KB |
|
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F20-1000-C2
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Triad Magnetics
|
Transformers - Power Transformers - XFRMR LAMINATED 20VA THRU HOLE |
Original |
PDF
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151.58KB |
|
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F20-1000-C2-B
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Triad Magnetics
|
Power Transformers, Transformers, XFRMR LAMINATED 20VA THRU HOLE |
Original |
PDF
|
|
1 |
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F201-003
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Tripp Lite
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Adapter Cards, Computers, Office - Components, Accessories, CARD IEEE1394 FIREWIRE PCI |
Original |
PDF
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1 |
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F2012
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Polyfet RF Devices
|
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Original |
PDF
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37.21KB |
2 |
|
F20-120
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Triad Magnetics
|
Transformers - Power Transformers - XFRMR LAMINATED THRU HOLE |
Original |
PDF
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67.01KB |
|
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F20-120
|
|
MagneTek
|
Over 600 obsolete distributor catalogs now available on the Datasheet Archive - TRANSFORMER, SPLIT BOBBIN, PC MOUNT, SINGLE PRIMARY, 2.5VA, 20.0V CT |
Scan |
PDF
|
56.88KB |
1 |
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F20-120-C2
|
|
Triad Magnetics
|
Transformers - Power Transformers - XFRMR LAMINATED 2.4VA THRU HOLE |
Original |
PDF
|
151.71KB |
|
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F20-120-C2-B
|
|
Triad Magnetics
|
Power Transformers, Transformers, XFRMR LAMINATED 2.4VA THRU HOLE |
Original |
PDF
|
|
1 |
|
F2013
|
|
Polyfet RF Devices
|
PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR |
Original |
PDF
|
37.85KB |
2 |
|
F20-1800
|
|
Triad Magnetics
|
Transformers - Power Transformers - XFRMR LAMINATED THRU HOLE |
Original |
PDF
|
67.07KB |
|
|
F20-1800-C2
|
|
Triad Magnetics
|
Transformers - Power Transformers - XFRMR LAMINATED 36VA THRU HOLE |
Original |
PDF
|
151.72KB |
|
|
F20-1800-C2-B
|
|
Triad Magnetics
|
Power Transformers, Transformers, XFRMR LAMINATED 36VA THRU HOLE |
Original |
PDF
|
|
1 |
|
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SBDF20150CT
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|
JCET Group
|
SBD20150CT and SBDF20150CT Schottky barrier rectifiers feature 150 V peak repetitive reverse voltage, 20 A average rectified output current, low forward voltage drop of 0.71 V at 125 °C, and 150 A non-repetitive surge current, housed in TO-220-3L/TO-220F packages. |
Original |
PDF
|
|
|
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MBRF20100CT
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SLKOR
|
High frequency, epoxy encapsulation, guard ring, solder dip 260°C max 8s, RoHS-compliant, 100-200V, 20A, 150A, -55 to +175°C. |
Original |
PDF
|
|
|
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SMF201B
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SUNMATE electronic Co., LTD
|
Surface mount fast recovery rectifier diodes in SMB/DO-214AA package, 50 to 1000V peak reverse voltage, 2.0A average rectified current, low forward voltage drop, glass passivated junction, operating temperature from -50 to +150°C. |
Original |
PDF
|
|
|
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JSPF20150ACT
|
|
Jiangsu JieJie Microelectronics Co Ltd
|
20A Schottky Barrier Rectifier with 150V maximum repetitive peak reverse voltage, low forward voltage drop, high current and surge capability, in ITO-220AB package, lead-free and compliant with RoHS. |
Original |
PDF
|
|
|
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SBDF20100TCTB
|
|
JCET Group
|
SBD20100TCTB and SBDF20100TCTB are Schottky barrier rectifiers with 100 V DC blocking voltage, 20 A average rectified output current, 150 A non-repetitive surge current, low forward voltage drop of 0.62 V at 125°C, and operating junction temperature up to 150°C. |
Original |
PDF
|
|
|
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UF201
|
|
SUNMATE electronic Co., LTD
|
2.0 A ultra fast switching rectifier diodes in DO-15 package with repetitive reverse voltage ratings from 50 to 1000 V, low forward voltage drop, and surge current capability up to 60 A. |
Original |
PDF
|
|
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SBDF20150CT
