ESAC33 Search Results

ESAC33-02CS

Abstract: esac33 ESAC33-02C
Contextual Info: ESAC33-02CS 10A • Outline Drawing SOFT RECOVERY SUPER HIGH SPEED ■ Features • Soft recovery, low noise • High reliability ■ Applications • High speed power switching ■ Maximum Ratings & Characteristics • Absolute Maximum Ratings Items Symbols

ESAC33

Contextual Info: ESAC33 CS (10A)_ Ei'i'nW 'i *-v FAST RECOVERY DIODE • t t f t : Features • m0&& w v Soft recovery, low noise. • s it usti High reliability Connection Diagram ■ ffliS s : Applications High speed p ow er s w itc h in g . ■ S t è n t i : M axim um Ratings and Characteristics

ESAC33

Contextual Info: ESAC33 C, N , P (8A) : Outline Drawings FAST RECOVERY DIODE * Features JEDEC_ TO-22QAB H igh voltage by mesa design. EIAJ SC-46 High reliability Connection Diagram * Applications E S A C 3 3 -n n C o— ►) E S A C 3 3 -D D N æ° I High speed pow er sw itchin g.

a143

Abstract: ESAC33 T151
Contextual Info: ESAC33 C, N f D ( 8 a ) k a a a ia FAST RECOVERY DIODE Features High voltage by mesa design m i* n & High reliability Connection Diagram 9 ESAC33-nnC Iffliis ‘ Applications Y \4 ©o— n o(3) High speed power switching ESAC33-nnN o- \4 ESAC33-DDD

esac33

Abstract: power Diode 200V 10A
Contextual Info: ESAC33 CS (10A) (200V / 10A) Outline drawings, mm 10+0.5 4.5±0.2 1.32 15±0.2 2.7±0.1 Ø3.6±0.2 6.4±0.2 FAST RECOVERY DIODE 2 3 1.2 14 -0.5 3.7±0.2 1 0.4 0.8 2.7 2.54 5.08 Features JEDEC EIAJ Soft recovery, low noise High reliability TO-220AB SC-46 Connection diagram

Contextual Info: ESAC33IC. N . D |8 ai FAST RECOVERY DIODE : Features H ig h vo lta g e by m esa d e s ig n . • K i t *Stt H igh re lia b ility i m m * Connection Diagram • ^ ì é ^ A pplications • a * * a *-f ESAC33-DDC o - ►] 9 1 ESAC33-nnN d ^ ^ -N -

esac33

Contextual Info: ESAC33 C,N,D (8A) (200V / 8A) Outline drawings, mm 10+0.5 4.5±0.2 1.32 14 -0.5 1.2 3.7±0.2 15±0.2 2.7±0.1 Ø3.6±0.2 6.4±0.2 FAST RECOVERY DIODE 0.4 0.8 2.7 2.54 5.08 Features JEDEC EIAJ High voltage by mesa design High reliability TO-220AB SC-46 Connection diagram

ESAC33M

Abstract: ESAC33MC ESAC33MN
Contextual Info: ESAC33M C,N,D (8A) (200V / 8A) Outline drawings, mm FAST RECOVERY DIODE 10.5 Max. 4.5Max. Ø3.2+0.2 -0.1 6.0 Min. 3.7 17.0±0.3 4.7 2.0 13.0 1.2 0.4 0.8 2.7 2.54 5.08 Features JEDEC EIAJ Insulated package by fully molding High voltage by mesa design SC-67

ESAC33

Contextual Info: ESAC33 C, N , P (8A) : Outline Drawings FAST RECOVERY DIODE * Features JEDEC_ TO-22QAB H igh voltage by mesa design. EIAJ SC-46 High reliability Connection Diagram * Applications E S A C 3 3 -n n C o— ►) E S A C 3 3 -D D N æ° I High speed pow er sw itchin g.

ESAC33M

Abstract: ESAC33MC ESAC33MN
Contextual Info: ESAC33M C,N,D (8A) (200V / 8A) Outline drawings, mm FAST RECOVERY DIODE 10.5 Max. 4.5Max. Ø3.2+0.2 -0.1 6.0 Min. 3.7 17.0±0.3 4.7 2.0 13.0 1.2 0.4 0.8 2.7 2.54 5.08 Features JEDEC EIAJ Insulated package by fully molding High voltage by mesa design SC-67

esaC33M

Contextual Info: ESAC33M C,N,D (8A) : O utline D raw in g s FAST RECOVERY DIODE •$#;§: : Featu res • t t W ttffliP t tl» * * .* ? n > * - M W 7 Insulated package by fully m o ld in g . 5E H igh voltage by mesa design. • ¡git C o n n ectio n D iagram H igh reliability

ESAC33

Contextual Info: ESAC33 CS (10A)_ Ei'i'nW 'i *-v FAST RECOVERY DIODE • t t f t : Features •m0&& w v Soft recovery, low noise. • sit usti High reliability Connection Diagram ■ ffliS s : Applications High speed p ow er s w itc h in g . ■ S t è n t i : Maximum Ratings and Characteristics

1AM Diode

Abstract: ESAC33 1AM Y
Contextual Info: ESAC33ÎCS 1 0 A ) K FAST RECOVERY D IO D E • 4 N fc : Features •»0«# X tfflsv.' Soft recovery, low noise. • S f if iH l mm&m High reliability Connection Diagram life : Applications High speed pow er sw itching. M axim um Ratings and Characteristics

diode ed 8a

Abstract: ESAC33M ESAC33MC ESAC33MD ESAC33MN nd8a
Contextual Info: ESAC33M C,N,D (8A) (200V / 8A) Outline drawings, mm FAST RECOVERY DIODE 10.5 Max. 4.5Max. Ø3.2+0.2 -0.1 6.0 Min. 3.7 17.0±0.3 4.7 2.0 13.0 1.2 0.4 0.8 2.7 2.54 5.08 Features JEDEC EIAJ Insulated package by fully molding High voltage by mesa design SC-67

ESAC33M

Abstract: T151 Diode LT 02 A148 a148 diode
Contextual Info: E S A C 3 3 M C , I N I , D ( s a ) FAST RECOVERY DIODE • t t f t : Features Insulated package by fully m olding. m m & rn C o nnectio n D iagram High voltage by mesa design. • B fS B tt High reliability ESAC33M-nrJC : A p p licatio ns °— W —

ESAC33

Contextual Info: ESAC33 CS (10A)_ Ei'i'nW'i *-v FAST RECOVERY DIODE • t t f t : Features • m0 & & w v Soft recovery, low noise. • s it usti High reliability Connection Diagram ■ ffliS s : Applications High speed p ow er s w itc h in g . ■ S t è n t i : M axim um Ratings and Characteristics

ESAC33

Abstract: ESAC33C ESAC33N
Contextual Info: ESAC33 C,N,D (8A) (200V / 8A) Outline drawings, mm 10+0.5 4.5±0.2 1.32 14 -0.5 1.2 3.7±0.2 15±0.2 2.7±0.1 Ø3.6±0.2 6.4±0.2 FAST RECOVERY DIODE 0.4 0.8 2.7 2.54 5.08 Features JEDEC EIAJ High voltage by mesa design High reliability TO-220AB SC-46 Connection diagram

Contextual Info: ESAC33 CS (1 0 A ) a±'J 'W ji W t - v FAST RECOVERY DIODE : Features • m E Q U A M fr'v n ttttto s * S o ft re co ve ry , lo w n o ise . • S ls fiiti H ig h relia b ility Connection Diagram : A pplications • a a « í l x - f • y ^ > í f, H ig h speed p o w e r s w itc h in g .

W88L

Contextual Info: ESAC33 CS ( 1 A ) _ E i ' i ' n W ' i * - v FAST RECOVERY DIODE • t t f t : Features • m 0& & w v Soft recovery, low noise. • s i t u s ti High reliability Connection Diagram ■ ffliS s : Applications High speed p ow er s w itc h in g .

power Diode 200V 10A

Abstract: ESAC33
Contextual Info: ESAC33 CS (10A) (200V / 10A) Outline drawings, mm 10+0.5 4.5±0.2 1.32 15±0.2 2.7±0.1 Ø3.6±0.2 6.4±0.2 FAST RECOVERY DIODE 2 3 1.2 14 -0.5 3.7±0.2 1 0.4 0.8 2.7 2.54 5.08 Features JEDEC EIAJ Soft recovery, low noise High reliability TO-220AB SC-46 Connection diagram

MUR1560 equivalent

Abstract: 1N4004 SMA S1A SOD 88 S1A MARKING CODE SOD 88 1N5189 ss33 sma Diode marking us1j diode 6a10 6TQ035 usd745c equivalent
Contextual Info: MBRD835L Preferred Device SWITCHMODE Power Rectifier DPAK Surface Mount Package This SWITCHMODE power rectifier which uses the Schottky Barrier principle with a proprietary barrier metal, is designed for use as output rectifiers, free wheeling, protection and steering diodes in

1n5822 trr

Abstract: A14F diode FR105 diode MR850 diode A14A BYV27 200 TAP LT2A02 MBR3100 0630 1N4007 sod-123 SES50
Contextual Info: MBRD1035CTL SWITCHMODE Schottky Power Rectifier DPAK Power Surface Mount Package . . . employing the Schottky Barrier principle in a large area metal–to–silicon power diode. State of the art geometry features epitaxial construction with oxide passivation and metal overlay

OZ 9983

Abstract: mbr3045pt transistor 940 629 MOTOROLA 220 Motorola marking code K 652 TO-220 MUR3030 TRANSISTOR BC 456 Diode Marking 1N4007 Motorola 1N2069 A14F diode BYV33-45
Contextual Info: MBRB3030CTL Advance Information SWITCHMODE Power Rectifier . . . using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: http://onsemi.com Features: • Dual Diode Construction —

Diode 1N4007 DO-7 Rectifier Diode

Abstract: FE8D marking BCV BA157* diode MUR160 SMa diode rgp10g MBRD360 cathode top 1n5619 1N2069 mur120 equivalent diode
Contextual Info: MBRM120ET3 Surface Mount Schottky Power Rectifier POWERMITE Power Surface Mount Package The Schottky Powermite employs the Schottky Barrier principle with a barrier metal and epitaxial construction that produces optimal forward voltage drop–reverse current tradeoff. The advanced