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    EPC8010 Search Results

    EPC8010 Datasheets (3)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    EPC8010
    EPC Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - TRANS GAN 100V 2.7A BUMPED DIE Original PDF 1.69MB
    EPC8010ENGR
    Efficient Power Conversion FETs - Single, Discrete Semiconductor Products, TRANS GAN 100V 3.4A BUMPED DIE Original PDF 7
    EPC8010TENGR
    Efficient Power Conversion FETs - Single, Discrete Semiconductor Products, TRANS GAN 100V 3.4A BUMPED DIE Original PDF 7
    SF Impression Pixel

    EPC8010 Price and Stock

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    Efficient Power Conversion EPC8010

    GANFET N-CH 100V 4A DIE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () EPC8010 Digi-Reel 411 1
    • 1 $3.08
    • 10 $2.00
    • 100 $1.38
    • 1000 $1.16
    • 10000 $1.16
    Buy Now
    EPC8010 Cut Tape 411 1
    • 1 $3.08
    • 10 $2.00
    • 100 $1.38
    • 1000 $1.16
    • 10000 $1.16
    Buy Now
    EPC8010 Reel 2,500
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.95
    Buy Now
    Vyrian EPC8010 2,216
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
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    EPC EPC8010

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Chip Stock EPC8010 11,358
    • 1 -
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    EPC8010 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    J6 transistor

    Abstract: transistor j6 transistor marking code 431
    Contextual Info: EPC8010 – Enhancement Mode Power Transistor Preliminary Specification Sheet Features: • VDS, 100V • RDS ON , 160 mΩ • ID, 3.4 A • Optimized eGaN FET for high frequency applications EPC8010 eGaN FETs are supplied only in passivated die form with solder bars


    Original
    EPC8010 EPC8010 J6 transistor transistor j6 transistor marking code 431 PDF

    EPC8004

    Contextual Info: APPLICATION NOTE: AN015 eGaN FETs for Multi-MHz Applications Introducing a Family of eGaN FETs for Multi-Megahertz Hard Switching Applications EFFICIENT POWER CONVERSION Michael de Rooij, PhD, Johan Strydom, PhD The ultra high speed switching capabilities of gallium nitride transistors have now been


    Original
    AN015 EPC8000 ATS-54150K-C2-R0 EPC8004 PDF